SI1024X-T1-GE3 Datasheet SI1024X-T1-GE3, SI1024X-T1-E3 | P1-P3

Vishay Siliconix

Si1024X

Document Number: 71170

S11-0854-Rev. E, 02-May-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET: 1.8 V Rated

• Very Small Footprint

• High-Side Switching

• Low On-Resistance: 0.7 

• Low Threshold: 0.8 V (typ.)

• Fast Switching Speed: 10 ns

• 1.8 V Operation

• Gate-Source ESD Protected: 2000 V

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Low Battery Voltage Operation

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(mA)

20

0.70 at V

GS

= 4.5 V

600

0.85 at V

GS

= 2.5 V

500

1.25 at V

GS

= 1.8 V

350

Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code: C

100 Ω

1

2

34

5

6

S

1

G

1

D

2

D

1

G

2

S

2

Top View

SOT-563

SC-89

100 Ω

Notes:

a. Surface mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

20

V

Gate-Source Voltage

V

GS

± 6

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

515 485

mA

T

A

= 85 °C

370 350

Pulsed Drain Current

b

I

DM

650

Continuous Source Current (Diode Conduction)

a

I

S

450 380

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

280 250

mW

T

A

= 85 °C

145 130

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

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Document Number: 71170

S11-0854-Rev. E, 02-May-11

Vishay Siliconix

Si1024X

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.45 0.9 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 4.5 V

± 0.5 ± 1 µA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

0.3 100 nA

V

DS

= 20 V, V

GS

= 0 V, T

J

= 85 °C

5µA

On-State Drain Current

a

I

D(on)

V

DS

= 5 V, V

GS

= 4.5 V

700 mA

Drain-Source On-State

Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 600 mA

0.41 0.70



V

GS

= 2.5 V, I

D

= 500 mA

0.53 0.85

V

GS

= 1.8 V, I

D

= 350 mA

0.70 1.25

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 400 mA

1 S

Diode Forward Voltage

a

V

SD

I

S

= 150 mA, V

GS

= 0 V

0.8 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 250 mA

750

pCGate-Source Charge

Q

gs

75

Gate-Drain Charge

Q

gd

225

Tur n - O n T i m e

t

d(on)

V

DD

= 10 V, R

L

= 47 

I

D

 200 mA, V

GEN

= 4.5 V, R

g

= 10 

10

ns

Turn-Off Time

t

d(off)

36

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

= 5 V thru 1.8 V

V

DS

- Drain-to-Source Voltage (V)

-

Drain Current (A)I

D

1 V

Transfer Characteristics

0

200

400

600

800

1000

1200

0.0 0.5 1.0 1.5 2.0 2.5

T

C

= - 55 °C

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (mA)

Document Number: 71170

S11-0854-Rev. E, 02-May-11

www.vishay.com

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Vishay Siliconix

Si1024X

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.0

0.8

1.6

2.4

3.2

4.0

0 200 400 600 800 1000

I

D

- Drain Current (mA)

V

GS

= 1.8 V

V

GS

= 4.5 V

V

GS

= 2.5 V

0

1

2

3

4

5

0.0 0.2 0.4 0.6 0.8

V

DS

= 10 V

I

D

= 250 mA

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1000

1

V

SD

-

)V( egatloV niarD-ot-ecruoS

-Source Current (mA)I

S

T

J

= 125 °C

T

J

= 25 °C

T

J

= - 55 °C

10

100

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

20

40

60

80

100

048 12 16 20

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

V

GS

= 0 V

f = 1 MHz

0.60

0.

80

1.00

1.20

1.40

1.60

- 50 - 25 0 25 50 75 100 125

V

GS

= 4.5 V

I

D

= 600 mA

T

J

-Junction Temperature (°C)

V

GS

= 1.8 V

I

D

= 350 mA

R

DS(on)

-

On-Resistance

(Normalized)

0

1

2

3

4

5

0123456

I

D

= 350 mA

- On-Resistance (Ω)R

DS(on)

GS

-Gate-to-Source Voltage (V)

I

D

= 200 mA

V

SI1024X-T1-GE3

SI1024X-T1-GE3

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