GPP60A, GPP60B, GPP60D, GPP60G
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Vishay General Semiconductor
Revision: 26-Mar-15
1
Document Number: 88886
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Glass Passivated Junction Plastic Rectifier
FEATURES
• Glass passivated pallet chip junction
• Low forward voltage drop
• Low leakage current, typical I
R
less than 0.2 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes application.
MECHANICAL DATA
Case: P600, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
6.0 A
V
RRM
50 V, 100 V, 200 V, 400 V
I
FSM
500 A
V
F
1.1 V
I
R
5.0 μA
T
J
max. 175 °C
Package P600
Diode variations Single die
P600
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL GPP60A GPP60B GPP60D GPP60G UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 V
Maximum RMS voltage V
RMS
35 70 140 280 V
Maximum DC blocking voltage V
DC
50 100 200 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
6.0 A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load
I
FSM
500 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GPP60A GPP60B GPP60D GPP60G UNIT
Maximum instantaneous forward voltage 6.0 A V
F
1.1 V
Maximum reverse current at rated DC blocking
voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 100 °C 100
Maximum reverse recovery time
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
5.5 μs
Typical junction capacitance 4.0 V, 1 MHz C
J
110 pF
