OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STTH602CBY-TR

P1-P3P4-P6P7-P9
March 2017
DocID023250 Rev 2
1/9
This is information on a product in full production.
www.st.com
STTH602C-Y
Automotive ultrafast recovery diode
Datasheet - production data
Features
AEC-Q101 qualified
Suited for SMPS
Low losses
Low forward and reverse recovery time
High surge current capability
High junction temperature
PPAP capable
Description
This dual center tap diode is suited for switch
mode power supplies and high frequency DC to
DC converters.
Packaged in DPAK, this device is intended for
use in low voltage high frequency inverters,
freewheeling and polarity protection for
automotive applications.
Table 1: Device summary
Symbol
I
F(AV)
2 x 3 A
V
RRM
200 V
V
F
(typ.)
0.80 V
T
j
(max.)
175 °C
T
rr
(typ.)
14 ns
DPAK
A1
A1
K
K
A2
A2
Characteristics
STTH602C-Y
2/9
DocID023250 Rev 2
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
Forward rms current
11
A
I
F(AV)
Average forward current
δ = 0.5, square wave
T
c
= 160 °C
3
A
T
c
= 155 °C
6
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
60
A
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
-40 to +175
°C
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-c)
Junction to case
Per diode
5
°C/W
Per device
3
R
th(c)
Coupling
1
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P (diode 1) x R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
3
µA
T
j
= 125 °C
-
3
30
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
-
0.98
1.1
V
T
j
= 150 °C
-
0.8
0.95
T
j
= 25 °C
I
F
= 6 A
-
1.1
1.25
T
j
= 150 °C
-
0.9
1.05
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.85 x I
F(AV)
+ 0.033 x I
F
2
(RMS)
STTH602C-Y
Characteristics
DocID023250 Rev 2
3/9
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 1 A,
dI
F
/dt = -100 A/μs,
V
R
= 30 V, T
j
= 25 °C
-
14
20
ns
I
F
= 1 A,
dI
F
/dt = -50 A/μs,
V
R
= 30 V, T
j
= 25 °C
-
21
30
I
RM
Reverse recovery current
I
F
= 3 A,
dI
F
/dt = 200 A/μs,
V
R
= 160 V, T
j
= 125 °C
-
4
5.5
A
t
fr
Forward recovery time
I
F
= 3 A,
dI
F
/dt = 200 A/μs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
-
24
ns
V
FP
Forward recovery voltage
I
F
= 3 A,
dI
F
/dt = 200 A/μs, T
j
= 25 °C
-
3.7
V
P1-P3P4-P6P7-P9

STTH602CBY-TR

Mfr. #:
Buy STTH602CBY-TR
Manufacturer:
STMicroelectronics
Description:
Diodes - General Purpose, Power, Switching Automotive Ultrafast 2x3A 200V 0.80VF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet