MK5812
LOW EMI CLOCK GENERATOR SSCG
IDT™
LOW EMI CLOCK GENERATOR 5
MK5812 REV B 122109
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3 V ±10%, Ambient Temperature 0 to +85° C
AC Electrical Characteristics
Unless stated otherwise, VDD = 3.3 V ±10%, Ambient Temperature 0 to +85° C, C
L
= 15 pF
Note 1: Spread is enabled.
Thermal Characteristics for 8-pin SOIC
Parameter Symbol Conditions Min. Typ. Max. Units
Operating Voltage VDD 3.0 3.3 3.63 V
Supply Current IDD No load, at 3.3 V, Fin=12 MHz 13 25 mA
No load, at 3.3 V, Fin=24 MHz 30 mA
No load, at 3.3 V, Fin=32 MHz 35 mA
Input High Voltage V
IH
0.85VDD VDD VDD V
Input Middle Voltage V
IHM
0.4VDD 0.5VDD 0.6VDD V
Input Low Voltage V
IL
0.0 0.0 0.15VDD V
Output High Voltage V
OH
CMOS, I
OH
= -4 mA 2.4 V
Output High Voltage V
OH
I
OH
= -6 mA 2.0 V
Output Low Voltage V
OL
I
OL
= -4 mA 0.4 V
I
OL
= -10 mA 1.2 V
Input Capacitance C
IN1
S0, S1, FRSEL pins 4 6 pF
C
IN2
X1, X2 pins 6 9 pF
Parameter Symbol Conditions Min. Typ. Max. Units
Input Clock Frequency 4 32 MHz
Output Clock Frequency 8 64 MHz
Input Clock Duty Cycle Time above VDD/2 40 60 %
Output Clock Duty Cycle Time above 1.5 V 45 50 55 %
Cycle-to-cycle Jitter
1
Fin=8 MHz, Fout=16 MHz 225 400 ps
Cycle-to-cycle Jitter
1
Fin=16 MHz, Fout=32 MHz 210 380 ps
Output Rise Time t
R
0.4 to 2.4 V 2.0 5.0 ns
Output Fall Time t
F
2.4 to 0.4 V 2.0 4.4 ns
EMI Peak Frequency Reduction 8 to 16 dB
Parameter Symbol Conditions Min. Typ. Max. Units
Thermal Resistance Junction to
Ambient
θ
JA
Still air 150 ° C/W
θ
JA
1 m/s air flow 140 ° C/W
θ
JA
3 m/s air flow 120 ° C/W
Thermal Resistance Junction to Case θ
JC
40 ° C/W
