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MPSA18RLRA

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
MPSA18/D
MPSA18
Preferred Device
Low Noise Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 Vdc
Collector−Base Voltage V
CBO
45 Vdc
Emitter−Base Voltage V
EBO
6.5 Vdc
Collector Current − Continuous I
C
200 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. R
θ
JA
is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MPSA18RLRM TO−92 2000/Ammo Pack
MPSA18RLRMG TO−92
(Pb−Free)
2000/Ammo Pack
MPSA18RLRA TO−92 2000/Tape & Ree
l
MPSA18RLRAG TO−92
(Pb−Free)
2000/Tape & Ree
l
Device Package Shipping
†
MPSA18 TO−92 5000 Units/Box
MPSA18G TO−92
(Pb−Free)
5000 Units/Box
COLLECTOR
3
2
BASE
1
EMITTER
Preferred devices are recommended choices for future use
and best overall value.
MPSA18RLRP TO−92 2000/Ammo Pack
MPSA18RLRPG TO−92
(Pb−Free)
2000/Ammo Pack
ORDERING INFORMATION
MPSA18 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING
DIAGRAM
MPS
A18
AYWW G
G
MPSA18
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
45 − − Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
45 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.5 − − Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
− 1.0 50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
h
FE
400
500
500
500
580
850
1100
1150
−
−
−
1500
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
−
−
−
0.08
0.2
0.3
Vdc
Base−Emitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
− 0.6 0.7 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 160 − MHz
Collector−Base Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− 1.7 3.0 pF
Emitter−Base Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
− 5.6 6.5 pF
Noise Figure
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 10 kW, f = 1.0 kHz)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 100 Hz)
NF
−
−
0.5
4.0
1.5
−
dB
Equivalent Short Circuit Noise Voltage
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 100 Hz)
V
T
− 6.5 −
nVń Hz
Ǹ
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MPSA18
http://onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
NOISE VOLTAGE
e
n
, NOISE VOLTAGE (nV)
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
300 mA
30 mA
R
S
≈ 0
3.0 mA
1.0 mA
7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
R
S
≈ 0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
I
C
= 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
10 mA
R
S
≈ 0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
= 1.0 mA
500 mA
100 mA
10 mA
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
R
S
, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
V
T
, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz I
C
= 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
I
C
= 10 mA
300 mA
100 mA
30 mA
3.0 mA
1.0 mA
10 mA
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
P1-P3P4-P5

MPSA18RLRA

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Buy MPSA18RLRA
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 45V NPN
Lifecycle:
New from this manufacturer.
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