NXP Semiconductors
PBSS4260PANP
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
PBSS4260PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 12 December 2012 13 / 21
aaa-000116
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 14. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-000117
10
-1
10
-2
10
1
10
2
V
CEsat
(V)
10
-3
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 15. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
aaa-000134
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-000327
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
