Product Standards
Transistors with Built-in Resistor
DRA9143Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
4.7 +30%
k
Resistance ratio R1/R2 0.17 0.21 0.27 -
Input resistance R1 -30%
-0.5 V
-1.2 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
200 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 60
-0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -6 V, IC = 0 -0.4 mA
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50
Max Unit
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50 V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT 125 mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
R1
4.7
k
R2 22
k
1of3
Unit: mm
Min Typ
SC-89
Collector
JEITA
DRA9143Y0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9143Y
DRA5143Y in SSMini3 type package
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
Unit
Marking Symbol:
L7
Code
Base
Emitter
SOT-490
Panasonic
Packaging
SSMini3-F3-B
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
C
B
R
1
R
2
E
