APT17F80S Datasheet APT17F80B, APT17F80S | P1-P3

N-Channel FREDFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

oz

g

in·lbf

N·m

Ratings

18

11

70

±30

797

9

Min Typ Max

500

0.25

0.11

-55 150

300

0.22

6.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Pulsed Drain Current

1

Gate-Source Voltage

Single Pulse Avalanche Energy

2

Avalanche Current,

Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-247 Package), 6-32 or M3 screw

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θ

JC

R

θ

CS

T

J

,T

STG

T

L

W

T

Torque

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck

converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low t

rr

for high reliability

• Ultra low C

rss

for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

TO-247

D

3

PAK

APT17F80B

APT17F80S

800V, 18A, 0.58Ω Max, t

rr

≤250ns

APT17F80B

APT17F80S

POWER MOS 8

®

is a high speed, high voltage N-channel switch-mode power

MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-

mized for high reliability in ZVS phase shifted bridge and other circuits through reduced

t

rr

, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a

greatly reduced ratio of C

rss

/C

iss

result in excellent noise immunity and low switching

loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control di/dt during switching, resulting in low EMI and reliable paralleling, even

when switching at very high frequency.

Microsemi Website - http://www.microsemi.com

050-8165 Rev C 8-2011

Static Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Dynamic Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Source-Drain Diode Characteristics

1

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2

Starting at T

J

= 25°C, L = 19.7mH, R

G

= 25Ω, I

AS

= 9A.

3

Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4

C

o(cr)

is deﬁ ned as a ﬁ xed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is deﬁ ned as a ﬁ xed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -3.43E-8/V

DS

^2 + 1.44E-8/V

DS

+ 5.38E-11.

6

R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

Unit

V

V/°C

Ω

V

mV/°C

μA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

μC

A

V/ns

Min Typ Max

800

0.87

0.42 0.58

2.5 4 5

-10

250

1000

±100

Min Typ Max

18

70

1.2

216 250

371 450

0.97

2.33

9

14

25

Min Typ Max

17

3757

64

374

177

88

122

20

62

21

31

93

27

Test Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 250μA

V

GS

= 10V, I

D

= 9A

V

GS

= V

DS

, I

D

= 1mA

V

DS

= 800V T

J

= 25°C

V

GS

= 0V T

J

= 125°C

V

GS

= ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 9A, T

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

= 9A

3

T

J

= 25°C

di

SD

/dt = 100A/μs T

J

= 125°C

V

DD

= 100V T

J

= 25°C

T

J

= 125°C

I

SD

≤ 9A, di/dt ≤1000A/μs, V

DD

= 400V,

T

J

= 125°C

Test Conditions

V

DS

= 50V, I

D

= 9A

V

GS

= 0V, V

DS

= 25V

f = 1MHz

V

GS

= 0V, V

DS

= 0V to 400V

V

GS

= 0 to 10V, I

D

= 9A,

V

DS

= 400V

Resistive Switching

V

DD

= 533V, I

D

= 9A

R

G

= 2.2Ω

6

, V

GG

= 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁ cient

Drain-Source On Resistance

3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁ cient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time Preliminary 05-2008

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

∆V

BR(DSS)

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

050-8165 Rev C 8-2011

APT17F80B_S

V

GS

= 6, 7, 8 & 9V

4.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

5V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 9A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 9A

V

DS

= 960V

V

DS

= 240V

V

DS

= 600V

T

J

= 150°C

T

J

= 25°C

T

J

= 125°C

T

J

= 150°C

C

rss

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

0 5 10 15 20 25 30 0 5 10 15 20 25 30

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 2 4 6 8 10 12 0 200 400 600 800 1000

0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1.0 1.2

60

50

40

30

20

10

0

3.0

2.5

2.0

1.5

1.0

0.5

0

25

20

15

10

5

0

16

14

12

10

8

6

4

2

0

20

15

10

5

0

60

50

40

30

20

10

0

10,000

1,000

100

10

60

50

40

30

20

10

0

APT17F80B_S

050-8165 Rev C 8-2011

APT17F80S

APT17F80S

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