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NRVB120VLSFT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 4
1 Publication Order Number:
MBR120VLSFT1/D
MBR120VLSF,
NRVB120VLSF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Optimized for Very Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C;
Human Body Model, 3B
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Reel Options: MBR120VLSFT1G = 3,000 per 7″ reel/8 mm tape
MBR120VLSFT3G = 10,000 per 13″ reel/8 mm tape
• Device Marking: L2V
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MBR120VLSFT1G SOD−123FL
(Pb−Free)
3000 / Tape &
Reel
MBR120VLSFT3G SOD−123FL
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−123FL
CASE 498
L2V
M
G
G
MARKING DIAGRAM
L2V = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
NRVB120VLSFT1G SOD−123FL
(Pb−Free)
3000 / Tape &
Reel
MBR120VLSF, NRVB120VLSF
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(Rated V
R
) T
L
= 119°C
I
F(AV)
1.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
45 A
Storage Temperature Range T
stg
−65 to +125 °C
Operating Junction Temperature T
J
−65 to +125 °C
Voltage Rate of Change (Rated V
R
) dv/dt 1000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Characteristic Symbol T
J
= 255C T
J
= 855C Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 0.1 A)
(I
F
= 0.5 A)
(I
F
= 1.0 A)
V
F
0.275
0.315
0.340
0.205
0.270
0.300
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage)
I
R
0.60 15
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MBR120VLSF, NRVB120VLSF
http://onsemi.com
3
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.30.1 0.2 0.6
T
J
= 85°C
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
0.1
10
1
0.1
0.40.2 0.3 0.
5
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
0.50.4
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
1E−3
100E−6
10E−6
V
R
, REVERSE VOLTAGE (VOLTS)
51015 2
0
0
100E−6
10E−6
51015
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
100E−3
10E−3
1E−3
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
SQUARE
WAVE
dc
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
T
L
, LEAD TEMPERATURE (°C)
4525
1.8
1.2
1.0
0.6
0.2
0
85 105
0.8
65 125
0.4
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.20
0.5
0.3
0.1
0
1.00.4 0.8 1.2 1.6
0.4
0.6 1.4
0.2
1.4
1.6
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= p
SQUARE
WAVE
dc
freq = 20 kHz
I
pk
/I
o
= p
I
pk
/I
o
= 5
I
pk
/I
o
= 10
I
pk
/I
o
= 20
P1-P3P4-P5

NRVB120VLSFT1G

Mfr. #:
Buy NRVB120VLSFT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers AUTO STANDARD OF MBR
Lifecycle:
New from this manufacturer.
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