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NTD14N03RT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 9
1 Publication Order Number:
NTD14N03R/D
NTD14N03R, NVD14N03R
Power MOSFET
14 A, 25 V, N−Channel DPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low R
DS(on)
to Minimize Conduction Loss
• Low C
iss
to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• NVD and SVD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 Vdc
Gate−to−Source Voltage − Continuous V
GS
±20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C, Chip
− Continuous @ T
A
= 25°C, Limited by Package
− Single Pulse (tp ≤ 10 ms)
R
q
JC
P
D
I
D
I
D
I
D
6.0
20.8
14
11.4
28
°C/W
W
A
A
A
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
80
1.56
3.1
°C/W
W
A
Thermal Resistance, Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
120
1.04
2.5
°C/W
W
A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
www.onsemi.com
14 AMPERES, 25 VOLTS
R
DS(on)
= 70.4 mW (Typ)
D
S
G
N−CHANNEL
MARKING DIAGRAM
& PIN ASSIGNMENTS
A = Assembly Location*
Y = Year
WW = Work Week
14N03 = Device Code
G = Pb−Free Package
DPAK
CASE 369C
(Surface Mount)
STYLE 2
AYWW
T14
N03G
4 Drain
3
Source
1
Gate
2
Drain
1
2
3
4
See detailed ordering and shipping information on page 5 o
f
this data sheet.
ORDERING INFORMATION
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD14N03R, NVD14N03R
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V(br)
DSS
25
−
28
−
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current
(V
GS
= ±20 Vdc, V
DS
= 0 Vdc)
I
GSS
− − ±100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.5
−
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 5 Adc)
(V
GS
= 10 Vdc, I
D
= 5 Adc)
R
DS(on)
−
−
117
70.4
130
95
mW
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 5 Adc)
g
FS
− 7.0 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
− 115 −
pF
Output Capacitance C
oss
− 62 −
Transfer Capacitance C
rss
− 33 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 5 Adc, R
G
= 3 W)
t
d(on)
− 3.8 −
ns
Rise Time t
r
− 27 −
Turn−Off Delay Time t
d(off)
− 9.6 −
Fall Time t
f
− 2.0 −
Gate Charge
(V
GS
= 5 Vdc, I
D
= 5 Adc,
V
DS
= 10 Vdc) (Note 3)
Q
T
− 1.8 −
nC
Q
1
− 0.8 −
Q
2
− 0.7 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 5 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 5 Adc, V
GS
= 0 Vdc, T
J
= 125°C
)
V
SD
−
−
0.93
0.82
1.2
−
V
dc
Reverse Recovery Time
(I
S
= 5 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 6.6 −
ns
t
a
− 4.75 −
t
b
− 1.88 −
Reverse Recovery Stored Charge Q
RR
− 0.002 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD14N03R, NVD14N03R
www.onsemi.com
3
TYPICAL CHARACTERISTICS
1.8
1.6
1.2
1.4
1
0.8
0.6
100
10
1000
8
4
12
2
6
0
14
0.08
0
10
10
4
42
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.16
0.20
864
0.12
0.08
0.04
0
21012
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
14
−50 50250−25 75 125100
034215
068410212
0
0.04
0.12
0.20
0202
5
15105
V
GS
= 2.5 V
6
2
6
8
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
6
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 10 V
V
GS
= 4.5 V
150
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
I
D
= 5 A
V
GS
= 10 V
0.16
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
1
4
14
10
8
12
7 V
5 V
10 V
3.5 V
4 V
4.5 V
8 V
6 V
3 V
P1-P3P4-P6

NTD14N03RT4G

Mfr. #:
Buy NTD14N03RT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET 25V 14A N-Channel
Lifecycle:
New from this manufacturer.
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