MC74VHC126DR2

MC74VHC126
Quad Bus Buffer
with 3State Control Inputs
The MC74VHC126 is a high speed CMOS quad bus buffer
fabricated with silicon gate CMOS technology. It achieves
noninverting high speed operation similar to equivalent Bipolar
Schottky TTL while maintaining CMOS low power dissipation.
The MC74VHC126 requires the 3state control input (OE) to be set
Low to place the output into high impedance.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
High Speed: t
PD
= 3.8 ns (Typ) at V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 4.0 μA (Max) at T
A
= 25°C
High Noise Immunity: V
NIH
= V
NIL
= 28% V
CC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: V
OLP
= 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 72 FETs or 18 Equivalent Gates
These Devices are PbFree and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2011
May, 2011 Rev. 5
1 Publication Order Number:
MC74VHC126/D
14LEAD SOIC
D SUFFIX
CASE 751A
14LEAD TSSOP
DT SUFFIX
CASE 948G
PIN CONNECTIONS
Device Package Shipping
ORDERING INFORMATION
MC74VHC126DR2G SOIC 2500 Units/Reel
MC74VHC126DTR2G TSSOP
2500 Units/Reel
11
12
13
14
8
9
105
4
3
2
1
7
6
OE3
Y4
A4
OE4
V
CC
Y3
A3
OE2
Y1
A1
OE1
GND
Y2
A2
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See general marking information in the device marking
section on page 7 of this data sheet.
DEVICE MARKING INFORMATION
(Top View)
MC74VHC126
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2
ActiveHigh Output Enables
FUNCTION TABLE
VHC126
Inputs Output
AOE Y
HH H
LH L
XL Z
Y1
Y2
Y4
3
6
8
11
13
12
10
9
4
5
1
2
A1
OE1
A2
OE2
A3
OE3
A4
OE4
Y3
Figure 1. Logic Diagram
MC74VHC126
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3
MAXIMUM RATINGS (Note 1)
Symbol Parameter Value Unit
V
CC
DC Supply Voltage –0.5 to +7.0 V
V
in
DC Input Voltage –0.5 to +7.0 V
V
out
DC Output Voltage –0.5 to V
CC
+ 0.5 V
I
IK
Input Diode Current 20 mA
I
OK
Output Diode Current ±20 mA
I
out
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±50 mA
P
D
Power Dissipation in Still Air (Note 2) SOIC Packages
TSSOP Package
500
450
mW
T
stg
Storage Temperature –65 to +150
_C
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute maximumrated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
2. Derating SOIC Packages: – 7.0 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
in
DC Input Voltage 0 5.5 V
V
out
DC Output Voltage 0 V
CC
V
T
A
Operating Temperature, All Package Types 55 +125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
100
20
ns/V

MC74VHC126DR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC BUF NON-INVERT 5.5V 14SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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