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VND5025LAKTR-E

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VND5025LAK-E Electrical characteristics
Doc ID 12794 Rev 6 7/31
2 Electrical characteristics
Figure 3. Current and voltage conventions
Note: V
Fn
= V
OUTn
- V
CC
during reverse battery condition
2.1 Absolute maximum ratings
V
F
(*)
I
S
I
GND
V
CC
V
CC
V
SENSE2
OUTPUT1
I
OUT1
CURRENT
I
SENSE1
INPUT1
I
IN1
V
IN2
V
OUT2
GND
CS_DIS
I
CSD
V
CSD
INPUT2
I
IN2
V
IN1
SENSE1
OUTPUT2
I
OUT2
CURRENT
I
SENSE2
SENSE2
V
SENSE1
V
OUT1
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41
V
-V
CC
Reverse DC supply voltage 0.3
-I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current Internally limited
A
- I
OUT
Reverse DC output current 24
I
IN
DC input current
-1 to 10
mAI
CSD
DC current sense disable input current
-I
CSENSE
DC reverse CS pin current 200
V
CSENSE
Current sense maximum voltage V
CC
- 41 to +V
CC
V
E
MAX
(1)
Maximum switching energy (single pulse)
(L = 0.3mH; R
L
=0Ω; V
bat
= 13.5V; T
jstart
=150°C;
I
OUT
= I
limL
(Typ.))
109 mJ
V
ESD
Electrostatic Discharge
(Human Body Model: R = 1.5kΩ; C = 100pF)
- Input
- Current sense
- CS_DIS
- Output
- V
CC
4000
2000
4000
5000
5000
V
V
V
V
V
Electrical characteristics VND5025LAK-E
8/31 Doc ID 12794 Rev 6
2.2 Thermal data
2.3 Electrical characteristics
8V<V
CC
<36V; -40°C< T
j
<150°C, unless otherwise specified
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150
°C
T
stg
Storage temperature -55 to 150
1. See Section 3.4 for details.
Table 4. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 5. Thermal data
Symbol Parameter Max Value Unit
R
thj-case
Thermal resistance junction-case (MAX) (with one channel ON) 1.35
°C/W
R
thj-amb
Thermal resistance junction-ambient (MAX) See Figure 29
Table 6. Power section
Symbol Parameter Test conditions Min Typ Max Unit
V
CC
Operating supply
voltage
4.5 13 36
VV
USD
Undervoltage shutdown 3.5 4.5
V
USDhyst
Undervoltage shutdown
hysteresis
0.5
R
ON
On-state resistance
(1)
1. For each channel
I
OUT
= 3A; T
j
=25°C 25
mΩI
OUT
= 3A; T
j
= 150°C 50
I
OUT
= 3A; V
CC
=5V; T
j
=25°C 35
V
clamp
Clamp voltage I
S
= 20 mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V; T
j
= 25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
2
(2)
2. PowerMOS leakage included
5
(2)
µA
On-state; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
36mA
I
L(off)
Off-state output
current
(1)
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
= 25°C 0 0.01 3
µA
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125°C 0 5
V
F
Output - V
CC
diode
voltage
(1)
-I
OUT
= 3A; T
j
= 150°C 0.7 V
VND5025LAK-E Electrical characteristics
Doc ID 12794 Rev 6 9/31
Table 7. Switching (V
CC
= 13V; T
j
= 25°C)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
Turn-on delay time
R
L
=4.3Ω
(seeFigure 8)
-35-
µs
t
d(off)
Turn-off delay time - 50 -
(dV
OUT
/dt)
on
Turn-on voltage slope
R
L
=4.3Ω
-(see Figure 21)-
V/µs
(dV
OUT
/dt)
off
Turn-off voltage slope - (see Figure 10)-
W
ON
Switching energy losses
during tW
ON
R
L
=4.3Ω
(see Figure 8)
-0.45-
mJ
W
OFF
Switching energy losses
during tW
OFF
-0.35-
Table 8. Logic input
Symbol Parameter Test conditions Min Typ Max Unit
V
IL
Input low level voltage 0.9 V
I
IL
Low level input current V
IN
=0.9V 1 µA
V
IH
Input high level voltage 2.1 V
I
IH
High level input current V
IN
=2.1V 10 µA
V
I(hyst)
Input hysteresis voltage 0.25
VV
ICL
Input clamp voltage
I
IN
=1mA 5.5 7
I
IN
= -1mA -0.7
V
CSDL
CS_DIS low level voltage 0.9
I
CSDL
Low level CS_DIS current V
CSD
=0.9V 1 µA
V
CSDH
CS_DIS high level voltage 2.1 V
I
CSDH
High level CS_DIS current V
CSD
=2.1V 10 µA
V
CSD(hyst)
CS_DIS hysteresis voltage 0.25
V
V
CSCL
CS_DIS clamp voltage
I
CSD
=1mA 5.5 7
I
CSD
=-1mA -0.7
Table 9. Protections and diagnostics
(1)
Symbol Parameter Test conditions Min Typ Max Unit
I
LIMH
DC short circuit current
V
CC
=13V
A
5V < V
CC
<36V
I
LIML
Short circuit current
during thermal cycling
V
CC
=13V;
T
R
<T
j
<T
TSD
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VND5025LAKTR-E

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Buy VND5025LAKTR-E
Manufacturer:
STMicroelectronics
Description:
IC DVR HIGH SIDE DUAL POWERSSO24
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