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NDF02N60ZG

P1-P3P4-P6P7-P9P10-P10
NDF02N60Z, NDD02N60Z
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0.10
1.0
10
0 50 100 150 200 250 300 350 400 450 500 550 600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (mA)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
T
J
= 150°C
T
J
= 125°C
0
50
100
150
200
250
300
350
400
450
500
550
600
0 5 10 15 20 25 30 35 40 45 50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 8. Capacitance Variation
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
01234567891011
0
50
100
150
200
250
300
350
Q
g
, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
T
Q
GD
Q
GS
V
DS
= 300 V
I
D
= 2.4 A
T
J
= 25°C
V
DS
V
GS
1.0
10
100
1000
1 10 100
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
t
d(off)
t
f
t
r
t
d(on)
V
DD
= 300 V
I
D
= 2.4 A
V
GS
= 10 V
0.1
1.0
10.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.
2
125°C
T
J
= 150°C
25°C
−55°C
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
I
S
, SOURCE CURRENT (A)
NDF02N60Z, NDD02N60Z
www.onsemi.com
5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.1 1 10 100 1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD02N60Z
V
GS
v 30 V
SINGLE PULSE
T
C
= 25°C
10 ms
100 ms
10 ms
dc
1 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
0.1 1 10 100 1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF02N60Z
V
GS
v 30 V
SINGLE PULSE
T
C
= 25°C
10 ms
100 ms
10 ms
dc
1 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
PULSE TIME (s)
R(t) (C/W)
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
R
q
JC
= 2.2°C/W
Steady State
50% (DUTY CYCLE)
20%
10%
5%
2%
SINGLE PULSE
1%
PULSE TIME (s)
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
R(t) (C/W)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
R
q
JA
= 41°C/W
Steady State
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
0.01
0.1
1
10
100
NDF02N60Z, NDD02N60Z
www.onsemi.com
6
0.01
0.1
1
10
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
PULSE TIME (s)
R(t) (C/W)
Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z
R
q
JC
= 4.9°C/W
Steady State
50% (DUTY CYCLE)
20%
10%
5%
2%
SINGLE PULSE
1%
LEADS
HEATSINK
0.110″ MIN
Figure 17. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
P1-P3P4-P6P7-P9P10-P10

NDF02N60ZG

Mfr. #:
Buy NDF02N60ZG
Manufacturer:
ON Semiconductor
Description:
MOSFET 4.8 OHM 600V TO-220FP
Lifecycle:
New from this manufacturer.
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