TSM2309CX RFG

TSM2309

60V P-Channel Power MOSFET

1/5

Version: A15

SOT

-

23

Key Parameter Performance

Parameter Value Unit

V

DS

-60 V

R

DS(on)

(max)

V

GS

= -10V

190

mΩ

V

GS

= -4.5V

240

Q

g

8.2 nC

Ordering Information

Part No. Package Packing

TSM2309CX RFG SOT-23 3kcs / 7” Reel

Note:

“G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

Block Diagram

P-Channel MOSFET

Absolute Maximum Ratings

(T

C

= 25°C unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage V

DS

-60

V

Gate-Source Voltage V

GS

±20

V

Continuous Drain Current

Tc=25°C

I

D

-3.1

A

Tc=100°C

-2

A

Pulsed Drain Current

(Note 1)

I

DM

-12.4

A

Power Dissipation @ T

C

= 25°C P

D

1.56 W

Operating Junction Temperature T

J

50 °C

Storage Temperature Range T

STG

-50 to +150

°C

Thermal Performance

Parameter Symbol Limit

Unit

Thermal Resistance - Junction to Ambient R

ӨJA

80 °C/W

Pin

Definition

:

1. Gate

2. Source

3. Drain

TSM2309

60V P-Channel Power MOSFET

2/5

Version: A15

Electrical Specifications

(T

C

= 25°C unless otherwise noted)

Parameter Conditions Symbol

Min Typ Max

Unit

Static

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= -250µA BV

DSS

-60 -- -- V

Drain-Source On-State Resistance

V

GS

= -10V, I

D

= -3A

R

DS(on)

-- 160 190

mΩ

V

GS

= -4.5V, I

D

= -1.5A

-- 200 240

Gate Threshold Voltage V

DS

= V

GS

, I

D

= -250µA V

GS(TH)

-1.2 -1.9 -2.5

V

Zero Gate Voltage Drain Current

V

DS

= -60V V

GS

= 0V

I

DSS

-- -- -1

µA

V

DS

= -48V T

J

= 125°C -- -- -10

Gate Body Leakage V

GS

= ±20V, V

DS

= 0V I

GSS

-- -- ±100

nA

Forward Transconductance V

DS

= -10V, I

D

= -3A g

fs

-- 3.5 -- S

Dynamic

Total Gate Charge

(Note 2,3)

V

DS

= -30V I

D

= -3A,

V

GS

= -10V

Q

g

--

8.2

--

nC

Gate-Source Charge

(Note 2,3)

Q

gs

--

1.8

--

Gate-Drain Charge

(Note 2,3)

Q

gd

--

1.5

--

Input Capacitance

V

DS

= -30V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

425

--

pF

Output Capacitance C

oss

--

35

--

Reverse Transfer Capacitance C

rss

--

20

--

Switching

Turn-On Delay Time

(Note 2,3)

V

DD

= -30V, I

D

= -1A,

V

GS

= -10V, R

GEN

= 6Ω

t

d(on)

--

5.2

--

ns

Turn-On Rise Time

(Note 2,3)

t

r

--

19

--

Turn-Off Delay Time

(Note 2,3)

t

d(off)

--

35

--

Turn-Off Fall Time

(Note 2,3)

t

f

--

10.6

--

Source-Drain Diode Ratings and Characteristic

Maximum Continuous Drain-Source

Diode Forward Current

Integral reverse diode in

the MOSFET

I

S

-- --

-3.1

A

Maximum Pulse Drain-Source Diode

Forward Current

I

SM

-- --

-12.4

A

Diode-Source Forward Voltage V

GS

= 0V, I

S

= -1A V

SD

-- --

-1 V

Note:

1. Pulse width limited by safe operating area

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%

3. Switching time is essentially independent of operating temperature.

TSM2309

60V P-Channel Power MOSFET

3/5

Version: A15

Electrical Characteristics Curve

Continuous Drain Current vs. T

C

Gate Charge

On-Resistance vs. Junction Temperature

Threshold Voltage vs. Junction Temperature

Maximum Safe Operating Area

Normalized Thermal Transient Impedance Curve

-I

D

, Continuous Drain Current (A)

T

C

, Case Temperature (°C)

-V

GS

,

Gate to Source Voltage (V)

Qg, Gate Charge (nC)

T

J

, Junction Temperature (°C)

Normalized On Resistance (m

W

)

Normalized Gate Threshold Voltage (V)

T

J

, Junction Temperature (°C)

-I

D

,

Continuous Drain Current (A)

-V

DS

, Drain to Source Voltage (V)

Normalized Thermal Response (R

θJC

)

Square Wave Pulse Duration (s)

TSM2309CX RFG

Mfr. #:

Buy TSM2309CX RFG

Manufacturer:

Taiwan Semiconductor

Description:

MOSFET -60V, -3.1A, Single P-Channel Power MOSFET

Lifecycle:

New from this manufacturer.

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TSM2309CX RFG