TIPL791, TIPL791A
NPN SILICON POWER TRANSISTORS
1
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Rugged Triple-Diffused Planar Construction
4 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100°C
1000 Volt Blocking Capability
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for t
p
≤ 10 ms, duty cycle ≤ 2%.
TINUEULAVLOBMYSGNITAR
Collector-base voltage (I
E
= 0)
TIPL791
TIPL791A
V
CBO
850
1000
V
Collector-emitter voltage (V
BE
= 0)
TIPL791
TIPL791A
V
CES
850
1000
V
Collector-emitter voltage (I
B
= 0)
TIPL791
TIPL791A
V
CEO
400
450
V
Emitter-base voltage V
EBO
10 V
Continuous collector current I
C
4 A
I)1 etoN ees( tnerruc rotcelloc kaeP
CM
8 A
Continuous device dissipation at (or b
elow) 25°C Perutarepmet esac
tot
75 W
Tegnar erutarepmet noitcnuj gnitarepO
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.