NSIC2020BT3G
http://onsemi.com
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1) T
A
= 25°C
Derate above 25°C
P
D
1210
8.0
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1)
R
θ
JA
124 °C/W
Thermal Reference, Junction−to−Tab (Note 1)
R
ψ
JL
17.5 °C/W
Total Device Dissipation (Note 2) T
A
= 25°C
Derate above 25°C
P
D
1282
8.5
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2)
R
θ
JA
117 °C/W
Thermal Reference, Junction−to−Tab (Note 2)
R
ψ
JL
18.2 °C/W
Total Device Dissipation (Note 3) T
A
= 25°C
Derate above 25°C
P
D
1667
11.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 3)
R
θ
JA
90 °C/W
Thermal Reference, Junction−to−Tab (Note 3)
R
ψ
JL
16.4 °C/W
Total Device Dissipation (Note 4) T
A
= 25°C
Derate above 25°C
P
D
1765
11.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 4)
R
θ
JA
85 °C/W
Thermal Reference, Junction−to−Tab (Note 4)
R
ψ
JL
16.7 °C/W
Total Device Dissipation (Note 5) T
A
= 25°C
Derate above 25°C
P
D
1948
13
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
R
θ
JA
77 °C/W
Thermal Reference, Junction−to−Tab (Note 5)
R
ψ
JL
15.5 °C/W
Total Device Dissipation (Note 6) T
A
= 25°C
Derate above 25°C
P
D
2055
12.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
R
θ
JA
73 °C/W
Thermal Reference, Junction−to−Tab (Note 6)
R
ψ
JL
15.6 °C/W
Total Device Dissipation (Note 7) T
A
= 25°C
Derate above 25°C
P
D
2149
14.3
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
R
θ
JA
69.8 °C/W
Thermal Reference, Junction−to−Tab (Note 7)
R
ψ
JL
14.8 °C/W
Total Device Dissipation (Note 8) T
A
= 25°C
Derate above 25°C
P
D
2269
15.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
R
θ
JA
66.1 °C/W
Thermal Reference, Junction−to−Tab (Note 8)
R
ψ
JL
14.8 °C/W
Total Device Dissipation (Note 9) T
A
= 25°C
Derate above 25°C
P
D
2609
17.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
R
θ
JA
57.5 °C/W
Thermal Reference, Junction−to−Tab (Note 9)
R
ψ
JL
13.9 °C/W
Total Device Dissipation (Note 10) T
A
= 25°C
Derate above 25°C
P
D
2500
16.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
R
θ
JA
60 °C/W
Thermal Reference, Junction−to−Tab (Note 10)
R
ψ
JL
16 °C/W
Total Device Dissipation (Note 11) T
A
= 25°C
Derate above 25°C
P
D
3000
20
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 11)
R
θ
JA
50 °C/W
Thermal Reference, Junction−to−Tab (Note 11)
R
ψ
JL
16 °C/W
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
1. 100 mm
2
, 1 oz. Cu, still air.
2. 100 mm
2
, 2 oz. Cu, still air.
3. 300 mm
2
, 1 oz. Cu, still air.
4. 300 mm
2
, 2 oz. Cu, still air.
5. 500 mm
2
, 1 oz. Cu, still air.
6. 500 mm
2
, 2 oz. Cu, still air.
7. 700 mm
2
, 1 oz. Cu, still air.
8. 700 mm
2
, 2 oz. Cu, still air.
9. 1000 mm
2
, 3 oz. Cu, still air.
10.400 mm
2
, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.
11. 900 mm
2
, PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent, still air.