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IRF644N

P1-P3P4-P6P7-P8
www.vishay.com Document Number: 91038
4 S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
20 µs Pulse Width
V
DS
= 50 V
10
2
10
1
I
D
, Drain-to-Source Current (A)
V
GS
,
Gate-to-Source Voltage (V)
6 8 10 12 14 16
4
91038_03
T
J
= 175 °C
T
J
= 25 °C
I
D
= 14 A
V
GS
= 10 V
3.5
0.0
1.0
1.5
2.0
2.5
3.0
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91038_04
- 60 - 40 - 20 0 20 40 60 80 100120 140160 180
0.5
10 10
2
C, Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91038_05
10
4
10
3
10
2
10
1
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
12
60
4836
24
V
DS
= 50 V
V
DS
= 125 V
V
DS
= 200 V
91038_06
I
D
= 8.4 A
Document Number: 91038 www.vishay.com
S-83000-Rev. A, 19-Jan-09 5
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
10
2
10
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.0
1.6
1.20.80.4
V
GS
= 0 V
91038_07
T
J
= 175 °C
T
J
= 25 °C
1
0.1
100
µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
10
3
0.1
1
10
110
10
2
10
3
91038_08
10
2
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
3
6
9
12
15
25 1501251007550
91038_09
175
0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
www.vishay.com Document Number: 91038
6 S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
D = 0.5
0.2
0.1
0.01
91038_11
0.05
0.02
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
15 V
20 V
I
AS
V
DS
t
p
300
0
60
120
180
240
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Avalanche Energy (mJ)
Bottom
To p
I
D
3.4 A
5.9 A
8.4 A
91038_12c
175
P1-P3P4-P6P7-P8

IRF644N

Mfr. #:
Buy IRF644N
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Chan 250V 14 Amp
Lifecycle:
New from this manufacturer.
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