www.vishay.com Document Number: 91038
4 S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
20 µs Pulse Width
V
DS
= 50 V
10
2
10
1
I
D
, Drain-to-Source Current (A)
V
GS
,
Gate-to-Source Voltage (V)
6 8 10 12 14 16
4
91038_03
T
J
= 175 °C
T
J
= 25 °C
I
D
= 14 A
V
GS
= 10 V
3.5
0.0
1.0
1.5
2.0
2.5
3.0
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91038_04
- 60 - 40 - 20 0 20 40 60 80 100120 140160 180
0.5
10 10
2
C, Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91038_05
10
4
10
3
10
2
10
1
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
12
60
4836
24
V
DS
= 50 V
V
DS
= 125 V
V
DS
= 200 V
91038_06
I
D
= 8.4 A