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SSM3K56MFV,L3F

P1-P3P4-P6P7-P8
SSM3K56MFV
1
MOSFETs Silicon N-Channel MOS
SSM3K56MFV
SSM3K56MFV
SSM3K56MFV
SSM3K56MFV
Start of commercial production
2013-02
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: R
DS(ON)
= 235 mΩ (max) (@V
GS
= 4.5 V)
R
DS(ON)
= 300 mΩ (max) (@V
GS
= 2.5 V)
R
DS(ON)
= 480 mΩ (max) (@V
GS
= 1.8 V)
R
DS(ON)
= 840 mΩ (max) (@V
GS
= 1.5 V)
3.
3.
3.
3. Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
Packaging and Pin Configuration
VESM
1. Gate
2. Source
3. Drain
2014-04-04
Rev.2.0
SSM3K56MFV
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(Note 1)
(Note 1),(Note 2)
(Note 3)
(Note 4)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
T
ch
T
stg
Rating
20
±8
800
1600
150
500
150
-55 to 150
Unit
V
mA
mW
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm
2
)
Note 4: Mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
2
)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the power dissipation, P
D
, vary according to the
board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2014-04-04
Rev.2.0
SSM3K56MFV
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 3)
(Note 3)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
|Y
fs
|
Test Condition
V
GS
= ±6 V, V
DS
= 0 V
V
DS
= 16 V, V
GS
= 0 V
I
D
= 1 mA, V
GS
= 0 V
I
D
= 1 mA, V
GS
= -5 V
V
DS
= 3 V, I
D
= 1 mA
I
D
= 800 mA, V
GS
= 4.5 V
I
D
= 600 mA, V
GS
= 2.5 V
I
D
= 200 mA, V
GS
= 1.8 V
I
D
= 50 mA, V
GS
= 1.5 V
V
DS
= 3 V, I
D
= 200 mA
Min
20
15
0.4
Typ.
186
230
290
360
1.4
Max
±1
1
1.0
235
300
480
840
Unit
µA
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for
this device). Then, for normal switching operation, V
GS(ON)
must be higher than V
th
, and V
GS(OFF)
must be
lower than V
th
. This relationship can be expressed as: V
GS(OFF)
< V
th
< V
GS(ON)
.
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
on
t
off
Test Condition
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 10 V, I
D
= 200 mA
V
GS
= 0 to 2.5 V, R
G
= 50 Ω,
Duty ≤ 1%, Input: t
r
, t
f
< 5 ns
Common source, See Chapter 5.3
Min
Typ.
55
6
16
5.5
8.5
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 800 mA
Min
Typ.
1.0
0.12
0.4
Max
Unit
nC
2014-04-04
Rev.2.0
P1-P3P4-P6P7-P8

SSM3K56MFV,L3F

Mfr. #:
Buy SSM3K56MFV,L3F
Manufacturer:
Toshiba
Description:
MOSFET Small-signal FET 0.8A 20V 0.84ohm
Lifecycle:
New from this manufacturer.
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