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PBSS306PX,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS306PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 6 of 15
NXP Semiconductors
PBSS306PX
100 V, 3.7 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
=150°C
-- −50 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −0.5 A
[1]
200 300 -
V
CE
= −2V; I
C
= −1A
[1]
150 260 -
V
CE
= −2V; I
C
= −2A
[1]
100 175 -
V
CE
= −2V; I
C
= −4A
[1]
25 40 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −45 −60 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −90 −130 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −210 −300 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −400 mA
[1]
-5275mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.81 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.93 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.78 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −3A;
I
Bon
= −0.15 A;
I
Boff
=0.15A
-15- ns
t
r
rise time - 185 - ns
t
on
turn-on time - 200 - ns
t
s
storage time - 150 - ns
t
f
fall time - 175 - ns
t
off
turn-off time - 325 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
- 100 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-5080pF
PBSS306PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 7 of 15
NXP Semiconductors
PBSS306PX
100 V, 3.7 A PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
006aaa645
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa651
V
CE
(V)
0 −5−4−2 −3−1
−6
−8
−4
−2
−10
−12
−14
I
C
(A)
0
−145
I
B
(mA) = −1015
−290
−870
−725
−580
−435
006aaa646
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa649
−0.4
−0.8
−1.2
V
BEsat
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
PBSS306PX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 8 of 15
NXP Semiconductors
PBSS306PX
100 V, 3.7 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa647
−1
−10
−1
−10
V
CEsat
(V)
−10
−2
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa648
−1
−10
−1
−10
V
CEsat
(V)
−10
−2
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(3)
(2)
(1)
006aaa650
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(3)
(2)
(1)
006aaa652
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(3)
(2)
(1)
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PBSS306PX,115

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Buy PBSS306PX,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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