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IXGA36N60A3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 1020304050607080
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 30A
I
G
= 10 mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved
IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
4
6
8
10
12
0 20 40 60 80 100 120
R
G
- Ohms
E
off
- MilliJoules
0.0
0.8
1.6
2.4
3.2
4.0
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1
3
5
7
9
11
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5

V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
1
3
5
7
9
11
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5

V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 15A
I
C
= 30A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
450
550
650
750
850
950
0 20406080100120
R
G
- Ohms
t
f
- Nanoseconds
300
500
700
900
1100
1300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 15A, 30A
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
240
320
400
480
560
640
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
I
C
= 15A, 30A, 60A
`
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
250
350
450
550
650
750
850
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
240
300
360
420
480
540
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
IXYS REF: G_36N60A3(55) 7-22-13-B
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
30
60
90
120
150
0 20406080100120
R
G
- Ohms
t
r
- Nanoseconds
10
30
50
70
90
110
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V I
C
= 60A
I
C
= 15A
I
C
= 30A
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
10
20
30
40
50
60
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r
- Nanoseconds
15
17
19
21
23
25
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 19. Inductive Turn-on Switching Times vs.
Junction Temperature
5
15
25
35
45
55
65
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
15
17
19
21
23
25
27
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 30A
I
C
= 60A
P1-P3P4-P6

IXGA36N60A3

Mfr. #:
Buy IXGA36N60A3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT PT-LOW FREQUENCY
Lifecycle:
New from this manufacturer.
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