IXGH36N60A3 Datasheet IXGP36N60A3, IXGA36N60A3, IXGH36N60A3 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1M 600 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C110

T

C

= 110°C 36 A

I

CM

T

C

= 25°C, 1ms 200 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 5 I

CM

= 60 A

(RBSOA) Clamped Inductive Load V

CE

 V

CES

P

C

T

C

= 25°C 220 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb

M

d

Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100006A(7/13)

IXGA36N60A3

IXGP36N60A3

IXGH36N60A3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 25A

T

J

= 125°C 250 A

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= 30A, V

GE

= 15V, Note 1 1.4 V

V

CES

= 600V

I

C110

= 36A

V

CE(sat)



 1.4V

GenX3

TM

600V

IGBTs

Features



Optimized for Low Conduction Losses



International Standard Packages

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



Inrush Current Protection Circuits

Ultra Low Vsat PT IGBT for

up to 5kHz Switching

TO-247 (IXGH)

G





C

E

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXGA)

G

C

E

TO-220AB (IXGP)

G

E

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGA36N60A3 IXGP36N60A3

IXGH36N60A3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

I

C

= 30A, V

CE

= 10V, Note 1 25 42 S

C

ies

2380 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 115 pF

C

res

30 pF

Q

g

80 nC

Q

ge

I

C

= 30A, V

GE

= 15V, V

CE

= 0.5 • V

CES

12 nC

Q

gc

36 nC

t

d(on)

18 ns

t

ri

23 ns

E

on

0.74 mJ

t

d(off)

330 ns

t

fi

325 ns

E

off

3.00 mJ

t

d(on)

18 ns

t

ri

25 ns

E

on

1.50 mJ

t

d(off)

500 ns

t

fi

500 ns

E

off

5.30 mJ

R

thJC

0.56 °C/W

R

thCS

(TO-247) 0.25 °C/W

(TO-220) 0.50 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Inductive load, T

J

= 125°C

I

C

= 30A, V

GE

= 15V

V

CE

= 400V, R

G

= 5

Note 2

Inductive load, T

J

= 25°C

I

C

= 30A, V

GE

= 15V

V

CE

= 400V, R

G

= 5

Note 2

1 - Gate

2,4 - Collector

3 - Emitter

TO-220 (IXGP) Outline

TO-247 (IXGH) Outline

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-263 (IXGA) Outline

1 - Gate

2,4 - Collector

3 - Emitter

IXGA36N60A3 IXGP36N60A3

IXGH36N60A3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0246810121416

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

0.00.51.01.52.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 60A

30A

15A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGH36N60A3

IXGH36N60A3

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