I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision K)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 2Gb 1.35V (256 Meg x
8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
459 450 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
576 558 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
252 252 mA
Precharge quiet standby current I
DD2Q
2
360 360 mA
Precharge standby current I
DD2N
2
378 378 mA
Precharge standby ODT current I
DD2NT
1
387 369 mA
Active power-down current I
DD3P
2
378 378 mA
Active standby current I
DD3N
2
576 540 mA
Burst read operating current I
DD4R
1
954 846 mA
Burst write operating current I
DD4W
1
981 873 mA
Refresh current I
DD5B
1
1728 1719 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
270 270 mA
All banks interleaved read current I
DD7
1
1512 1458 mA
Reset current I
DD8
2
252 252 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 204-Pin DDR3L SODIMM
I
DD
Specifications
PDF: 09005aef84567057
ksf18c512_1gx72hz.pdf – Rev. I 8/15 EN
13
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© 2011 Micron Technology, Inc. All rights reserved.
