MT18KSF51272HZ-1G6K2 Datasheet MT18KSF1G72HZ-1G6P1, MT18KSF51272HZ-1G6K2, MT18KSF1G72HZ-1G4E2 | P1-P3

1.35V DDR3L SDRAM SODIMM

MT18KSF51272HZ – 4GB

MT18KSF1G72HZ – 8GB

Features

• DDR3L functionality and operations supported as

defined in the component data sheet

• 204-pin, small outline dual in-line memory module

(SODIMM) with ECC

• Fast data transfer rates: PC3-12800, PC3-10600

• 4GB (512 Meg x 72), 8GB (1 Gig x 72)

• V

= 1.35V (1.283–1.45V)

• V

= 1.5V (1.425–1.575V)

• Backward compatible to V

= 1.5V ±0.075V

• V

DDSPD

= 3.0–3.6V

• Supports ECC error detection and correction

• Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

• Dual-rank

• On-board I

C temperature sensor with integrated

serial presence-detect (SPD) EEPROM

• Fixed burst chop (BC) of 4 and burst length (BL) of 8

via the mode register set (MRS)

• Selectable BC4 or BL8 on-the-fly (OTF)

• Gold edge contacts

• Halogen-free

• Fly-by topology

• Terminated control, command, and address bus

Figure 1: 204-Pin SODIMM

(MO-268 R/C D1)

Module height: 30mm (1.181in)

Options Marking

• Operating temperature

– Commercial (0°C ≤ T

≤ +70°C) None

• Package

– 204-pin DIMM (halogen-free) Z

• Frequency/CAS latency

– 1.25ns @ CL = 11 (DDR3-1600) -1G6

– 1.5ns @ CL = 9 (DDR3-1333) -1G4

Table 1: Key Timing Parameters

Speed

Grade

Industry

Nomenclature

Data Rate (MT/s) t

RCD

(ns)

(ns)CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5

-1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125

-1G4 PC3-10600 – 1333 1333 1066 1066 800 667 13.125 13.125 49.125

-1G1 PC3-8500 – – – 1066 1066 800 667 13.125 13.125 50.625

-1G0 PC3-8500 – – – 1066 – 800 667 15 15 52.5

-80B PC3-6400 – – – – – 800 667 15 15 52.5

4GB, 8GB (x72, ECC, DR) 204-Pin DDR3L SODIMM

Features

PDF: 09005aef84567057

ksf18c512_1gx72hz.pdf – Rev. I 8/15 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Addressing

Parameter 4GB 8GB

Refresh count 8K 8K

Row address 32K A[14:0] 64K A[15:0]

Device bank address 8 BA[2:0] 8 BA[2:0]

Device configuration 2Gb (256 Meg x 8) 4Gb (512 Meg x 8)

Column address 1K A[9:0] 1K A[9:0]

Module rank address 2 S#[1:0] 2 S#[1:0]

Table 3: Part Numbers and Timing Parameters – 4GB Modules

Base device: MT41K256M8,

2Gb 1.35V DDR3L SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT18KSF51272HZ-1G6__ 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11

MT18KSF51272HZ-1G4__ 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9

Table 4: Part Numbers and Timing Parameters – 8GB Modules

Base device: MT41K512M8,

4Gb 1.35V DDR3L SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

MT18KSF1G72HZ-1G6__ 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11

MT18KSF1G72HZ-1G4__ 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9

Notes:

1. The data sheet for the base device can be found on Micron’s web site.

2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-

sult factory for current revision codes. Example: MT18KSF1G72HZ-1G6P1.

4GB, 8GB (x72, ECC, DR) 204-Pin DDR3L SODIMM

Features

PDF: 09005aef84567057

ksf18c512_1gx72hz.pdf – Rev. I 8/15 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Pin Assignments

Table 5: Pin Assignments

204-Pin DDR3 SODIMM Front 204-Pin DDR3 SODIMM Back

Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol

1 V

REFDQ

53 V

105 A1 157 DM5 2 V

54 DQ28 106 A2 158 V

3 V

55 DQ24 107 A0 159 DQ42 4 DQ4 56 DQ29 108 BA1 160 DQ46

5 DQ0 57 DQ25 109 V

161 DQ43 6 DQ5 58 V

110 V

162 DQ47

7 DQ1 59 DM3 111 CK0 163 V

8 V

60 DQS3# 112 CK1 164 V

9 V

61 V

113 CK0# 165 DQ48 10 DQS0# 62 DQS3 114 CK1# 166 DQ52

11 DM0 63 DQ26 115 V

167 DQ49 12 DQS0 64 V

116 V

168 DQ53

13 DQ2 65 DQ27 117 A10/AP 169 V

14 V

66 DQ30 118 NC 170 V

15 DQ3 67 V

119 BA0 171 DQS6# 16 DQ6 68 DQ31 120 NC 172 DM6

17 V

69 CB0 121 WE# 173 DQS6 18 DQ7 70 V

122 RAS# 174 DQ54

19 DQ8 71 CB1 123 V

175 V

20 V

72 CB4 124 V

176 DQ55

21 DQ9 73 V

125 CAS# 177 DQ50 22 DQ12 74 CB5 126 ODT0 178 V

23 V

75 DQS8# 127 S0# 179 DQ51 24 DQ13 76 DM8 128 ODT1 180 DQ60

25 DQS1# 77 DQS8 129 S1# 181 V

26 V

78 V

130 A13 182 DQ61

27 DQS1 79 V

131 V

183 DQ56 28 DM1 80 CB6 132 V

184 V

29 V

81 CB2 133 DQ32 185 DQ57 30 RESET# 82 CB7 134 DQ36 186 DQS7#

31 DQ10 83 CB3 135 DQ33 187 V

32 V

84 V

REFCA

136 DQ37 188 DQS7

33 DQ11 85 V

137 V

189 DM7 34 DQ14 86 V

138 V

190 V

35 V

87 CKE0 139 DQS4# 191 DQ58 36 DQ15 88 NF/A15

140 DM4 192 DQ62

37 DQ16 89 CKE1 141 DQS4 193 DQ59 38 V

90 A14 142 DQ38 194 DQ63

39 DQ17 91 BA2 143 V

195 V

40 DQ20 92 A9 144 DQ39 196 V

41 V

93 V

145 DQ34 197 SA0 42 DQ21 94 V

146 V

198 EVENT#

43 DQS2# 95 A12 147 DQ35 199 V

DDSPD

44 DM2 96 A11 148 DQ44 200 SDA

45 DQS2 97 A8 149 V

201 SA1 46 V

98 A7 150 DQ45 202 SCL

47 V

99 A5 151 DQ40 203 V

48 DQ22 100 A6 152 V

204 V

49 DQ18 101 V

153 DQ41 – – 50 DQ23 102 V

154 DQS5# – –

51 DQ19 103 A3 155 V

– – 52 V

104 A4 156 DQS5 – –

Note:

1. Pin 88 is NF for 4GB; A15 for 8GB.

4GB, 8GB (x72, ECC, DR) 204-Pin DDR3L SODIMM

Pin Assignments

PDF: 09005aef84567057

ksf18c512_1gx72hz.pdf – Rev. I 8/15 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18

MT18KSF51272HZ-1G6K2

Mfr. #:

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Manufacturer:

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Description:

Memory Modules DDR3 4GB SOEDIMM

Lifecycle:

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MT18KSF51272HZ-1G6K2

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