NXP Semiconductors
EC103D1W
SCR
EC103D1W All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 23 July 2014 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 400 V
V
RRM
repetitive peak reverse voltage - 400 V
I
T(AV)
average on-state current half sine wave; T
sp
≤ 114 °C; Fig. 1 - 0.5 A
I
T(RMS)
RMS on-state current half sine wave; T
sp
≤ 114 °C; Fig. 2;
Fig. 3
- 0.8 A
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- 8 AI
TSM
non-repetitive peak on-state
current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
- 9 A
I
2
t I
2
t for fusing
t
p
= 10 ms; sine-wave pulse - 0.32
A
2
s
dI
T
/dt rate of rise of on-state current I
T
= 2 A; I
G
= 0.01 A; dI
G
/dt = 0.1 A/µs - 50 A/µs
I
GM
peak gate current - 1 A
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
aaa-007698
0.4
0.2
0.6
0.8
0
0 0.60.40.20.1 0.50.3
P
tot
(W)
I
T(AV)
(A)
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
125
119
116
113
T
sp(max)
(°C)
122
a = 1.57
2.2
2.8
4
1.9
a = Form factor = I
T(RMS)
/I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values