Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3514S02
K BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10593EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
FEATURES
• Super low noise figure and high associated gain
NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3514S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB