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DMN1260UFA-7B

P1-P3P4-P6
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN1260UFA
D
S
G
Gate Protection
Diode
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) max
12V
366mΩ @ V
GS
= 4.5V
520mΩ @ V
GS
= 2.5V
950mΩ @ V
GS
= 1.8V
1500mΩ @ V
GS
=1.5V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Features
0.4mm Ultra Low Profile Package for Thin Application
0.48mm
2
Package Footprint, 16 Times Smaller than SOT23
Low On-Resistance
Low Input Capacitance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.00043 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN1260UFA-7B
X2-DFN0806-3
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
88 = Product Type Marking Code
Internal Schematic
Bottom View
X2-DFN0806-3
Top View
Package Pin Configuration
88
Top View
Bar Denotes Gate
and Source Side
e4
X2-DFN0806-3
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN1260UFA
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
12
V
Gate-Source Voltage
V
GSS
±8
Continuous Drain Current
(Note 5)
I
D
0.5
A
Pulsed Drain Current
(Note 6)
I
DM
1.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.36
W
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
353
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
12
—
—
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
1
μA
V
DS
= 10V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4
—
1.0
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
150
366
mΩ
V
GS
= 4.5V, I
D
= 200mA
—
200
520
V
GS
= 2.5V, I
D
= 100mA
—
260
950
V
GS
= 1.8V, I
D
= 50mA
—
350
1500
V
GS
= 1.5V, I
D
= 10mA
Diode Forward Voltage
V
SD
—
—
1.2
V
V
GS
= 0V, I
S
= 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
60
—
pF
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
13.8
—
pF
Reverse Transfer Capacitance
C
rss
—
12.1
—
pF
Total Gate Charge
Q
g
—
0.96
—
nC
V
DS
= 6V, V
GS
= 4.5V, I
D
= 0.2A
Gate-Source Charge
Q
gs
—
0.09
—
nC
Gate-Drain Charge
Q
gd
—
0.10
—
nC
Turn-On Delay Time
t
D(on)
—
7.4
—
ns
V
DD
= 6V, V
GS
= 4.5V,
I
D
= 0.2A, R
G
= 6Ω
Turn-On Rise Time
t
r
—
18.8
—
ns
Turn-Off Delay Time
t
D(off)
—
106.5
—
ns
Turn-Off Fall Time
t
f
—
59.2
—
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN1260UFA
Document number: DS37122 Rev. 3 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN1260UFA
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 0.5 1 1.5 2 2.5 3
V = 1.0V
GS
V = 1.2V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 8.0V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
0 0.5 1 1.5 2 2.5
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0.1
0.15
0.2
0.25
0.3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
V = V
I = 50mA
GS
D
1.8
V = V
I = 200mA
GS
D
4.5
V = .5V
I = 10mA
GS
D
1
V = .5V
I = 100mA
GS
D
2
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.1
0.2
0.3
0.4
0.5
-50 -25 0 25 50 75 100 125 150
V = V
I = 50mA
GS
D
1.8
V = V
I = 10mA
GS
D
1.5
V = V
I = 100mA
GS
D
2.5
V = V
I = 200mA
GS
D
4.5
P1-P3P4-P6

DMN1260UFA-7B

Mfr. #:
Buy DMN1260UFA-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC
Lifecycle:
New from this manufacturer.
Delivery:
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