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CSD02060G

P1-P3P4-P6
1
Subject to change without notice.
www.cree.com/power
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G
CSD02060–Silicon Carbide Schottky Diode
Zero recovery
®
RectifieR
V
RRM
= 600 V
I
F(AVG)
= 2 A
Q
c
= 7 nC
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCP
out
:200W-400W
• MotorDrives
-TypicalPower:0.50HP-1.0HP 
Package
TO-263-2 TO-220-2
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F(AVG)
AverageForwardCurrent
2.4
3.5
A
T
C
=150˚C,DC
T
C
=125˚C,DC
I
F(PEAK)
PeakForwardCurrent 5 A T
C
=125˚,T
REP
<1mS,Duty=0.5
I
FRM
RepetitivePeakForwardSurgeCurrent
12
9
A
T
C
=25˚C,t
P
=10ms,HalfSineWave
T
C
=125˚C,t
P
=10ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 22 A T
C
=25˚C,t
P
=1.5ms,HalfSineWave
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 65 A T
C
=25˚C,t
P
=10µs,Pulse
P
tot
PowerDissipation
31.9
10.6
W
T
C
=25˚C
T
C
=125˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
TO-220MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
PIN1
PIN2
CASE
Part Number Package Marking
CSD02060A TO-220-2 CSD02060
CSD02060G TO-263-2 CSD02060
2 CSD02060 Rev. G
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
ForwardVoltage
1.6
2.0
1.8
2.4
V
I
F
= 2 A T
J
=25°C
I
F
= 2 A T
J
=175°C
I
R
ReverseCurrent
50
100
200
1000
μA
V
R
= 600 V T
J
=25°C
V
R
= 600 V T
J
=175°C
Q
C
TotalCapacitiveCharge 7 nC
V
R
=600V,I
F
= 2A
di/dt=500A/μs
T
J
=25°C
C TotalCapacitance
120
20
15
pF
V
R
=0V,T
J
=25°C,f=1MHz
V
R
=200V,T
J
=25˚C,f=1MHz
V
R
=400V,T
J
=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
ThermalResistancefromJunctiontoCase 4.7 °C/W
R
θJA
ThermalResistancefromJunctiontoAmbient 53 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
4
3
2
1
0
V
F
Forward Voltage (V
)
I
F
Forward Current (A)
0 0.51.52.02.53.03.54.0
V
R
Reverse Voltage (V
)
I
R
Reverse Current (μA)
200
180
160
140
120
100
80
60
40
20
0
0 200400600800
3 CSD02060 Rev. G
Figure3.CurrentDerating Figure4.Capacitancevs.ReverseVoltage
Figure5.TransientThermalImpedance
Typical Performance
100
80
60
40
20
0
24
22
20
18
16
14
12
10
8
6
4
2
0
25 5075100125150175200
I
F(PEAK)
Peak Forward Current (A)
T
C
Case Temperature (
°
C
)
*
Frequency>1KHz
10%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Tim e (s)
Zth (°C/W)
V
R
Reverse Voltage (V
)
C
Capacitance (pF)
1 101001000
P1-P3P4-P6

CSD02060G

Mfr. #:
Buy CSD02060G
Manufacturer:
N/A
Description:
DIODE SCHOTTKY 600V 3.5A TO263-2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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