www.irf.com 1
05/31/06
IRF6610PbF
IRF6610TRPbF
DirectFET™ Power MOSFET
PD - 97220
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.18mH, R
G
= 25Ω, I
AS
= 12A.
Notes:
SQ SX ST MQ MX MT MP
3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
20
25
30
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= 15A
T
J
= 25°C
T
J
= 125°C
V
DSS
V
GS
R
DS(on)
R
DS(on)
20V max ±20V max
5.2mΩ@ 10V 8.2mΩ@ 4.5V
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
12
Max.
12
66
120
±20
20
15
13
0 2 4 6 8 10 12 14 16
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 16V
V
DS
= 10V
I
D
= 12A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
11nC 3.6nC 1.3nC 6.4nC 5.9nC 2.1V
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
DirectFET™ ISOMETRIC
SQ
Description
The IRF6610PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6610PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
