©2002 Fairchild Semiconductor Corporation SGL40N150D Rev. A1
IGBT
SGL40N150D
SGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The SGL40N150D is designed for induction heating
applications.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 3.7 V @ I
C
= 40A
• High input impedance
• Built-in fast recovery diode
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGL40N150D Units
V
CES
Collector-Emitter Voltage 1500 V
V
GES
Gate-Emitter Voltage ± 25 V
I
C
Collector Current @ T
C
= 25°C40 A
Collector Current @ T
C
= 100°C20 A
I
CM (1)
Pulsed Collector Current 120 A
I
F
Diode Continuous Forward Current @ T
C
= 100°C10 A
I
FM
Diode Maximum Forward Current 100 A
P
D
Maximum Power Dissipation @ T
C
= 25°C 200 W
Maximum Power Dissipation @ T
C
= 100°C80 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300 °C
Symbol Parameter Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance, Junction-to-Case -- 0.625 °C/W
R
θJC
(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 25 °C/W
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
G
C
E
TO-264
G
C
E
G
C
E
