DVR2V5W-7 Datasheet DVR2V5W-7, DVR3V3W-7 | P1-P3

DVR5V0W

Document number: DS30578 Rev. 6 - 2

1 of 5

www.diodes.com

July 2011

DVR5V0W

COMPLEX ARRAY FOR VOLTAGE REGULATORS

Features

• Epitaxial Planar Die Construction

• Selectively Paired NPN Transistors & Zener Diodes for Series

Pass Voltage Regulator Circuits

• Ideally Suited for Automated Assembly Processes

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Device Packaging Shipping

DVR5V0W-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Pin Configuration

Top View

SOT363

A

1

E

1

K

1

NC

C

1

B

1

VR04

YM

VR04 = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: Y = 2011

M = Month ex: 9 = September

DVR5V0W

Document number: DS30578 Rev. 6 - 2

2 of 5

www.diodes.com

July 2011

Maximum Ratings, Total Device @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

P

d

200 mW

Thermal Resistance, Junction to Ambient (Note 4)

R

θ

JA

625

°C/W

Operating and Storage Temperature Range

T

j

, T

STG

-55 to +150

°C

Maximum Ratings, NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

45 V

Collector-Emitter Voltage

V

CEO

18 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current - Continuous (Note 4)

I

C

1 A

Maximum Ratings, Zener Element @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Forward Voltage @ I

F

= 10mA V

F

0.9 V

Electrical Characteristics, NPN Transistor @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

V

(BR)CBO

45

⎯

V

I

C

= 100μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

18

⎯

V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

5

⎯

V

I

E

= 100μA, I

C

= 0

Collector Cutoff Current

I

CBO

⎯

1

μA

V

CB

= 40V, I

E

= 0

Emitter Cutoff Current

I

EBO

⎯

1

μA

V

EB

= 4V, I

C

= 0

ON CHARACTERISTICS (Note 5)

DC Current Gain

h

FE

150 800

⎯

I

C

= 100mA, V

CE

= 1V

Collector-Emitter Saturation Voltage

V

CE(SAT)

⎯

0.5 V

I

C

= 300mA, I

B

= 30mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

⎯

8 pF

V

CB

= 10V, f = 1.0MHz, I

E

= 0

Current Gain-Bandwidth Product

f

T

100

⎯

MHz

V

CB

= 10V, I

E

= 50mA, f = 100MHz

Electrical Characteristics, Zener Element @T

A

= 25°C unless otherwise specified

Zener Voltage Range

(Note 6)

Maximum Reverse

Leakage Current

(Note 5)

V

Z

@ I

ZT

I

ZT

I

R

@ V

R

Nom (V) Min (V) Max (V) mA

μA

V

5.1 4.85 5.36 0.05 5 3

Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

5. Short duration pulse test used to minimize self-heating effect.

6. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T

T

= 30°C ±1°C.

DVR5V0W

Document number: DS30578 Rev. 6 - 2

3 of 5

www.diodes.com

July 2011

0

50

25 50

75

100 125

150

175

200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

d

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs.

Ambient Temperature (Total Device)

A

100

150

200

0

(Note 4)

1

1,000

100

0.0001 .001 .01 1 10.1

h, D

C

U

R

EN

T

G

AIN

FE

I , COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs.

Collector Current (NPN Transistor)

C

V = 1.0V

CE

1

100

10

0.1

1

10

100

C

,

O

U

T

P

U

T

C

A

P

A

C

I

T

A

N

C

E (p

F

)

OBO

V , COLLECTOR-BASE VOLTAGE (V)

Fig. 3 Typical Output Capacitance vs.

Collector-Base Voltage (NPN Transistor)

CB

1

10

1,000

100

0.0001

.001

.01

.1 1

10

V,

(mV)

CE (SAT)

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE

I , COLLECTOR CURRENT (A)

Fig. 4 Typical Collector Saturation Voltage vs.

Collector Current (NPN Transistor)

C

V , ZENER VOLTAGE (V)

Fig. 5 Typical

Z

Zener Breakdown Characteristics

DVR2V5W-7

DVR2V5W-7

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