AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
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Vishay General Semiconductor
Revision: 19-Feb-16
1
Document Number: 88770
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High Current Density Standard Avalanche
Surface Mount Rectifiers
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Controlled avalanche characteristics
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
4.0 A
V
RRM
200 V, 400 V, 600 V, 800 V,
1000 V
I
FSM
100 A
E
AS
20 mJ
V
F
at I
F
= 4 A 0.92 V
T
J
max. 175 °C
Package TO-277A (SMPC)
Diode variations Single die
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL AS4PD AS4PG AS4PJ AS4PK AS4PM UNIT
Device marking code AS4D AS4G AS4J AS4K AS4M
Max. repetitive peak reverse voltage V
RRM
200 400 600 800 1000 V
Max. DC forward current (fig. 1)
I
F
(1)
4.0
A
I
F
(2)
2.4
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
100 A
Non-repetitive avalanche energy
at T
J
= 25 °C
I
AS
= 2.5 A max.
E
AS
20
mJ
I
AS
= 1.0 A typical 30
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C