LQA05TC600
Qspeed
™
Family
600 V, 5 A Q-Series PFC Diode
www.powerint.com January 2011
Product Summary
I
F(AVG)
5 A
V
RRM
600 V
Q
RR
(Typ at 125 °C) 27 nC
I
RRM
(Typ at 125 °C) 1.65 A
Softness t
b
/t
a
(Typ at 125 °C) 1.4
AC
TO-220AC
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest Q
RR
of any 600 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• Power Factor Correction (PFC) Boost Diode
• Motor drive circuits
• DC-AC Inverters
Features
• Low Q
RR
, Low I
RRM
, Low t
RR
• High dI
F
/dt capable (1000A/µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V
RRM
Peak repetitive reverse voltage 600 V
I
F(AVG)
Average forward current T
J
= 150 °C, T
C
= 115 °C 5 A
I
FSM
Non-repetitive peak surge current 60 Hz, ½ cycle 50 A
I
FSM
Non-repetitive peak surge current ½ cycle of t=28 µs Sinusoid, T
C
=25 °C 350 A
T
J(MAX)
Maximum junction temperature 150 °C
T
STG
Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 °C
V
ISOL
Isolation voltage (leads-to-tab) DC, + to tab 2500 V
P
D
Power dissipation T
C
= 25 °C 43.1 W
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
R
θ
JA
Junction to ambient TO-220 62 °C/W
R
θ
JC
Junction to case TO-220 2.9 °C/W
Pin Assignment
NC
NC
C
A
NC
NC
C
A