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P50L-050P-AS-DA
P1-P3
P4-P5
SANKEN ELECTR
IC CO., LTD.
RL2Z
031106
1
/
5
61426-
01
1.
Scope
The present specificatio
ns shall apply to
an RL2Z.
2.
Outline
T
ype
Silicon Diode
Structure
Resin Molded
Applications
High Frequency
Rectification
3.
Flammability
UL94V
-
0(Equivalent)
SANKEN ELECTR
IC CO., LTD.
RL2Z
031106
2
/
5
61426-
01
4.
Absolute maximum ratin
gs
N
o.
Item
Symbol
Unit
Rating
Co
nditions
1
T
ransient P
eak Reverse V
oltage
V
RSM
V
200
2
Peak Reverse
V
o
ltage
V
RM
V
200
3
A
ve
rage Forward Current
I
F(A
V)
A
2.0
Refer to Derating of 7
4
Peak Surge Forw
ard Current
I
FSM
A
30
10msec.
Half sinewave, one shot
5
I
2
t Limiting
V
alue
I
2
t
A
2
s
4
.5
1msec
≤
t
≤
10
msec
6
Junction T
emperature
T
j
°C
-
40
~
+150
7
Storage T
emperature
T
stg
°C
-
40
~
+150
5.
Electrical characteristic
s
N
o.
Item
Symbol
Unit
V
alue
Conditions
1
Forward V
oltage Drop
V
F
V
0.98 max.
I
F
=2.0A
2
Reverse Leakage Current
I
R
uA
50 max.
V
R
=V
RM
3
Reverse
Leakage
Current
Under
High T
emperature
H
・
I
R
uA
100 max.
V
R
=V
RM
, T
j
=150
°C
4
Reverse Recovery T
ime
t
rr
1
ns
50 max.
I
F
=I
RP
=100mA
9
0
% R
e
c
ove
ry
po
i
n
t
,
T
j
=
25
°C
t
rr
2
ns
35 max.
I
F
=100mA
,
I
RP
=200mA
7
5
% R
e
c
ove
ry
po
i
n
t
,
T
j
=
25
°C
5
Thermal Resistance
R
th(j
-
l)
°C
/W
12 max.
Between Junction and Lead
SANKEN ELECTR
IC CO., LTD.
RL2Z
031106
3
/
5
61426-
01
6.
Characteristics
I
F(A
V)
- P
F
P
F
(W)
Forward Power Dissipation (W)
I
F(A
V)
(A)
A
verage For
ward Current (A)
V
R
- P
R
P
R
(W)
Reverse Power Dissipation (W)
V
R
(V)
Reverse V
oltage (V)
0
.0
0
0
.0
1
0
.0
2
0
.0
3
0
50
100
150
200
0
.0
1
.0
2
.0
3
.0
0
.0
1
.0
2
.0
Tj=150
°C
t
T
t/T=1/6
t/T=1/3,sinewave
t/T=1/2
DC
Tj=150
°C
t
T
1-t/T=5/6
sinewave
1-t/T=2/3
1-t/T=1/2
P1-P3
P4-P5
P50L-050P-AS-DA
Mfr. #:
Buy P50L-050P-AS-DA
Manufacturer:
3M
Description:
Board to Board & Mezzanine Connectors .050 SURFACEMNT PLG .276"AND.315"MATN HT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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P50L-050P-AS-DA