1996 Sep 04 13
Philips Semiconductors Product specification
Light position controller TDA3629
Table 1 Duration of the pauses
The maximum allowable dissipated power P is then
0.77 W during the motor active periods in the event of a
DIP8 package being used. Dissipation pulses due to
starting and stopping the motor can be ignored because of
their short duration. This maximum allowable dissipated
power implies that the maximum continuous motor current
(I
m
) is approximately 250 mA during the motor active
periods when the supply voltage V
P
is 13 V. The maximum
allowable dissipated power P is 0.67 W during the motor
active periods in the event of a SO16 package being used.
This implies that the maximum continuous motor current
(I
m
) is approximately 220 mA during the motor active
periods when the supply voltage (V
P
) is 13 V.
T
amb
(°C) PAUSE (s)
<95 60
95 180
95 to 105 300
Fig.11 Thermal transient test.
The duration of the pause depends on the ambient temperature, see
Table 1.
handbook, halfpage
MGE642
active
motor
inactive
pause
8 s
4 s
time (s)
Stereo operation
The default application will be when two modules are
driven by one set potentiometer. One module controls the
left head light, where the other one controls the right head
light. Each module is connected by three wires: the battery
line, the ground line and the set input wire. This can result
in two additional fault conditions: from one module the
battery line or the ground line can be broken, when the
other module is still connected. Assume that the left one
operates normally, where the right one has a fault. The
setting potentiometer will have extra loading when the
battery line is broken. This will result in a lower voltage at
the wiper of the setting potentiometer. Thus the left module
will start to regulate until a new equilibrium is reached.
The amount of extra loading can be influenced by the
external series resistor in the set input. These fault
conditions and their implications should be considered
when the total application is designed.
Test diagram
All parameters in chapter “Characteristics” until this
section are measured at T
amb
= 25 °C and are tested at
each device using the test set-up of Fig.12. The only
exceptions are parameters supply current (motor active)
and output voltage (motor output) where the 1 k output
resistor is replaced by an appropriate current source.
1996 Sep 04 14
Philips Semiconductors Product specification
Light position controller TDA3629
Fig.12 Test set-up (general).
handbook, full pagewidth
MGE643
INPUT
STAGE
SHORT-CIRCUIT
SUPPLY
BROKEN WIRE
PROTECTION
- OVER VOLTAGE
- UNDER VOLTAGE
- TEMPERATURE
WINDOWS
AND
COMPARATORS
V
P
V
P1
V
P2
V
P
OUT1
1 k
OUTPUT
STAGES
OUT2
SET
FB
I
SET
I
SET
V
FB
V
SET
R
FB
=
20 k
R
SET
=
20 k
TDA3629
+
+
+
12 V
I
ref
1996 Sep 04 15
Philips Semiconductors Product specification
Light position controller TDA3629
IMMUNITY TO NARROW BAND ELECTROMAGNETIC
DISTURBANCES
Test procedure
GENERAL INFORMATION
The immunity is measured using a test procedure, which
is derived from the draft international standard
“ISO/DIS 11452”
, parts 1 and 7, submitted for circulation
1992 June 14.
The test is carried out using a printed-circuit test board in
a test set-up, which is illustrated in Fig.13. The circuit
diagram of the test board is shown in Fig.14. The physical
layout of the test board is shown in Figs 15 to 17.
PREPARATION OF TEST
The IC under test is mounted onto the printed-circuit test
board. The printed-circuit test board is mounted into the
faraday cage (RF-shielded 19 inch-rack) and connected to
the test equipment as shown in Fig.13. One of three RF
voltage injection points has to be chosen for injection,
while the others have to be connected to passive
terminations. The injection into the control loop via input
RFC is shown in Fig.13.
After the set-up is completed, the feedback voltage is
selected by the appropriate setting of a jumper in the
jumper field J1 (see Fig.14) and the battery voltage is
switched on. With no RF voltage injected the correct
operation of the system is verified by turning the SET
potentiometer (see Fig.13) left and right (or vice-versa).
The outputs OUT1 and OUT2 will switch to on-state
(absolute differential voltage V
diff
= 3 to 5 V DC) in both
turn directions. If the device under test functions correctly,
the potentiometer is set to a position where the absolute
voltage difference between the slider connection of the
potentiometer and the jumper J1 is less than 5 mV.
After adjustment, the absolute differential output voltage
V
diff
has to be below 100 mV. Having reached this
condition the immunity test may be started.
TEST OF IMMUNITY
For the test of immunity the RF voltage is injected into the
test board and V
diff
is monitored for degradation. V
diff
is
degraded if its actual value exceeds the maximum value
described in Table 2. In the test routine the frequency is
varied in steps from the start frequency to the stop
frequency (see Table 2). Within each frequency step the
level of injected RF voltage is incremented by steps to the
maximum test level, which is specified in Table 2.
Each step level is held constant for the dwell time. After the
dwell time has elapsed, the degradation of the absolute
output voltage is checked. If a degradation is detected it
has to be verified, because the level setting may have an
overshoot and the device under test may have a latching
behaviour. The verification is achieved by switching off the
power supply for 1 s after degradation is first detected.
Then the supply is switched on and the degradation is
rechecked. If the second check also indicates a
degradation, then the values of RF level and frequency are
inserted into a data file for reporting. If the second check is
negative the level is further increased.
If no degradation occurs until the specified maximum test
level is reached, the maximum level is recorded together
with the frequency of that step.
R
ECOMMENDED RF-VOLTAGE SETTING PROCEDURE
For a fast setting of the RF voltage to the required test level
step it is recommended that the substitution method is
used.
This method sets the actual test level with respect to level
values that have been filed in a pre-measurement.
The RF source in the test set-up is built from a low-power
RF generator and suitable amplifiers. In the recommended
pre-measurement the RF voltage at the injection point is
measured, while the signal generator outputs a constant
voltage level (e.g. 100 mV). Thus, the gain factor from the
output of the RF generator to the injection point can be
easily calculated.
In the pre-measurement the RF voltage at the injection
point is measured for each frequency step. Dividing this
measured voltage by 100 mV results in the gain factor for
this frequency. All gain factors together with their
frequency value are filed for use in the level setting of the
immunity tests.
In the immunity test routine, a required RF voltage test
level at a frequency step is obtained by setting the RF
signal generator to a level that is calculated by dividing the
required RF voltage test level by the gain factor of that
frequency.
Test conditions
The test is carried out using the test procedure as
mentioned before and under the conditions mentioned in
Table 2.

TDA3629T/YM/WJ

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC LIGHT POSITION CTRLR 16SOIC
Lifecycle:
New from this manufacturer.
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