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ADG819BRTZ-500RL7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Data Sheet ADG819
Rev. A | Page 3 of 16
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C
−40°C to
+85°C
–40°C to
+125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance, R
ON
1
0.5 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA; see Figure 16
0.6 0.7 0.8 Ω max
On Resistance Match Between
Channels, ΔR
ON
1
0.06 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
0.08 0.1 0.12 Ω max
On Resistance Flatness, R
FLAT(ON)
1
0.1 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
0.17 0.2 0.25 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source Off Leakage, I
S
(Off) ±0.01 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V; see Figure 17
±0.25 ±3 ±10 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V; see Figure 18
±0.25 ±3 ±25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
5 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
35 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 3 V; see Figure 19
45 50 55 ns max
t
OFF
10 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 3 V; see Figure 19
16 18 21 ns max
Break-Before-Make Time Delay,
t
BBM
5 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 3 V; see Figure 20
1 ns min
Charge Injection 20 pC typ V
S
= 2.5 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 21
Off Isolation –71 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
Channel-to-Channel Crosstalk –72 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 24
Bandwidth, –3 dB 17 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 23
C
S
(Off) 80 pF typ f = 1 MHz
C
D
, C
S
(On) 300 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V, digital inputs = 0 V or 5.5 V
I
DD
0.001 μA typ
1.0 2.0 μA max
1
On resistance parameters tested with I
S
= 10 mA.
2
Guaranteed by design; not subject to production test.
ADG819 Data Sheet
Rev. A | Page 4 of 16
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C
–40°C to
+85°C
–40°C to
+125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance, R
ON
1
0.7 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA; see Figure 16
1.4 1.5 1.6 Ω max
On Resistance Match Between
Channels, ΔR
ON
1
0.06 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
0.13 0.13 Ω max
On Resistance Flatness, R
FLAT(ON)
1
0.25 Ω typ V
S
= 0 V to V
DD
, I
S
= 100 mA
LEAKAGE CURRENTS V
DD
= 3.6 V
Source Off Leakage, I
S
(Off) ±0.01 nA typ V
S
= 3.3 V/1 V, V
D
= 1 V/3.3 V; see Figure 17
±0.25 ±3 ±10 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= 1 V, or V
S
= V
D
= 3.3 V; see Figure 18
±0.25 ±3 ±25 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
5 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
40 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 1.5 V; see Figure 19
60 65 70 ns max
t
OFF
10 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S
= 1.5 V; see Figure 19
16 18 21 ns max
Break-Before-Make Time Delay,
t
BBM
40 ns typ R
L
= 50 Ω, C
L
= 35 pF, V
S1
= V
S2
= 1.5 V; see Figure 20
1 ns min
Charge Injection 10 pC typ V
S
= 1.5 V, R
S
= 0 Ω,C
L
= 1 nF; see Figure 21
Off Isolation −71 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 22
Channel-to-Channel Crosstalk −72 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz; see Figure 24
Bandwidth, –3 dB 17 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 23
C
S
(Off) 80 pF typ f = 1 MHz
C
D
, C
S
(On) 300 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.6 V, digital Inputs = 0 V or 3.6 V
I
DD
0.001 μA typ
1.0 2.0 μA max
1
On resistance parameters tested with I
S
= 10 mA.
2
Guaranteed by design; not subject to production test.
Data Sheet ADG819
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted
Table 3.
Parameter Rating
V
DD
to GND −0.3 V to +7 V
Analog Inputs
1
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Digital Inputs
1
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Peak Current, Sx or D 400 mA (pulsed at 1 ms, 10%
duty cycle maximum)
Continuous Current, Sx or D 200 mA
Operating Temperature Range
Industrial −40°C to +85°C
Automotive −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
MSOP
θ
JA
Thermal Impedance 206°C/W
θ
JC
Thermal Impedance 44°C/W
SOT-23 (4-Layer Board)
θ
JA
Thermal Impedance 119°C/W
WLCSP (4-Layer Board)
θ
JA
Thermal Impedance 80°C/W
Lead Temperature, Soldering
(10 sec)
300°C
IR Reflow, Peak Temperature
(<20 sec)
235°C
1
Overvoltages at IN, Sx, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating can be applied at any
one time.
Table 4. Truth Table for the ADG819
IN Switch S1 Switch S2
0 On Off
1 Off On
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

ADG819BRTZ-500RL7

Mfr. #:
Buy ADG819BRTZ-500RL7
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 500mOhm 5.5V CMOS 2:1 Mux/SPDT
Lifecycle:
New from this manufacturer.
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