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STD65NF06
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Electrical ch
aracteristic
s
STD65NF06 - STP65NF06
4/14
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 3.
On/off states
Symbol
Parameter
T
est conditio
ns
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
breakdo
wn v
o
ltage
I
D
= 250µA, V
GS
=0
60
V
I
DSS
Zero gate voltage
drain cur
rent (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,@125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
2
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
, I
D
= 30A
11.5
14
m
Ω
T
able 4.
Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5 %.
Fo
r
wa
r
d
transconductance
V
DS
= 25V
,
I
D
=3
0
A
5
0
S
C
iss
C
oss
C
rss
Input capacita
nce
Output capacitance
Re
ve
rse transf
er
capacitance
V
DS
= 25V
, f = 1MHz,
V
GS
= 0
1700
400
135
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
T
urn-on delay time
Rise time
T
urn-off dela
y time
Fa
l
l
t
i
m
e
V
DD
= 30V
, I
D
= 30A
R
G
=4
.
7
Ω
V
GS
= 10V
(see
Figure
12
)
15
60
40
16
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 30V
, I
D
= 60A,
V
GS
= 10V
, R
G
=4
.
7
Ω
(see
Figure
13
)
54
10
20
75
nC
nC
nC
STD65NF06 - STP65NF06
Elect
rical character
istics
5/14
T
able 5.
Source drain diode
Symbol
Parameter
T
est conditio
ns
Min.
T
yp.
Max.
Unit
I
SD
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
V
SD
(2)
2.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5 %
F
orw
ard on v
olta
ge
I
SD
= 60A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Rev
e
rse re
covery ti
me
Re
verse reco
very charge
Re
ver
se recov
ery current
I
SD
= 60A, di/dt = 100A/µs
,
V
DD
= 25V
, T
j
= 150°C
(see
Figure
14
)
70
150
4.4
ns
nC
A
Electrical ch
aracteristic
s
STD65NF06 - STP65NF06
6/14
2.1 Electrical
characte
ristics (curves)
Figure 1.
Safe operating area
Figur
e 2.
Thermal impedance
Figure 3.
Output charact
erisics
Fig
ure 4.
T
ransfer charac
teristics
Figure 5.
Normalized breakdo
wn v
oltage
temperature
Figure 6.
Static
drain-sour
ce on resis
tance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STD65NF06
Mfr. #:
Buy STD65NF06
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 60V 11.5mohm 60A
Lifecycle:
New from this manufacturer.
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