OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MTP2P50E

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1 Publication Order Number:
MTP2P50E/D
MTP2P50EG
Power MOSFET
2 Amps, 500 Volts, P−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• This is a Pb−Free Device*
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
500 Vdc
Drain−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
500 Vdc
Gate−Source Voltage
− Continuous
− Non−Repetitive (t
p
≤ 10 ms)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
2.0
1.6
6.0
Adc
Apk
Total Power Dissipation
Derate above 25°C
P
D
75
0.6
W
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to 150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc,
I
L
= 4.0 Apk, L = 10 mH, R
G
= 25 W)
E
AS
80 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R
q
JC
R
q
JA
1.67
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
S
G
2 AMPERES, 500 VOLTS
R
DS(on)
= 6 W
Device Package Shipping
ORDERING INFORMATION
P−Channel
www.onsemi.com
MTP2P50EG TO−220AB
(Pb−Free)
50 Units/Rail
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAM
AND PIN ASSIGNMENT
MTP2P50E = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MTP
2P50EG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
MTP2P50EG
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
500
−
−
564
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 500 Vdc, V
GS
= 0 Vdc)
(V
DS
= 500 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
10
100
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0) I
GSS
− − 100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
−
3.0
4.0
4.0
−
Vdc
mV/°C
Static Drain−Source On−Resistance (V
GS
= 10 Vdc, I
D
= 1.0 Adc) R
DS(on)
− 4.5 6.0
W
Drain−Source On−Voltage (V
GS
= 10 Vdc)
(I
D
= 2.0 Adc)
(I
D
= 1.0 Adc, T
J
= 125°C)
V
DS(on)
−
−
9.5
−
14.4
12.6
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 1.0 Adc) g
FS
0.5 − − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 845 1183 pF
Output Capacitance C
oss
− 100 140
Reverse Transfer Capacitance C
rss
− 26 52
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 250 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 W)
t
d(on)
− 12 24 ns
Rise Time t
r
− 14 28
Turn−Off Delay Time t
d(off)
− 21 42
Fall Time t
f
− 19 38
Gate Charge (See Figure 8)
(V
DS
= 400 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
Q
T
− 19 27 nC
Q
1
− 3.7 −
Q
2
− 7.9 −
Q
3
− 9.9 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
2.3
1.85
3.5
−
Vdc
Reverse Recovery Time
(See Figure 14)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
− 223 −
ns
t
a
− 161 −
t
b
− 62 −
Reverse Recovery Stored Charge Q
RR
− 1.92 −
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
L
D
−
−
3.5
4.5
−
−
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
− 7.5 − nH
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
MTP2P50EG
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
04 8 28
0
1
2
3
4
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
234567
0
1
2
3
4
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 1 2 2.5 3.5 4
0
2
6
10
01 2 3 4
4
4.5
5
5.5
6
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.5
1
1.5
2
R
DS(on)
1
10
100
1000
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
, DRAIN‐TO‐SOURCE RESISTANCE (OHMS)
, DRAIN‐TO‐SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
T
J
= 25°C V
DS
≥ 10 V
T
J
= - 55°C
25°C
100°C
T
J
= 100°C
T
J
= 25°C
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 1 A
12 16
6 V
5 V
3.5
2.5
1.5
0.5
2.5 3.5 4.5 5.5 6.5
4
8
31.50.5
25°C
-55°C
V
GS
= 10 V
15 V
- 50 - 25 0 25 50 75 100 125 150 0 10050 150 200 250 500300 350 400 450
T
J
= 125°C
100°C
25°C
0.5 1.5 2.5 3.5
3.5
2.5
1.5
0.5
20 24
4 V
8 V
7 V
5.75
5.25
4.75
4.25
R
DS(on)
R
DS(on)
, DRAIN‐TO‐SOURCE RESISTANCE (OHMS)
P1-P3P4-P6P7-P7

MTP2P50E

Mfr. #:
Buy MTP2P50E
Manufacturer:
ON Semiconductor
Description:
MOSFET 500V 2A P-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet