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CPC7556NTR

P1-P3P4-P6
I
NTEGRATED
C
IRCUITS
D
IVISION
e
3
Pb
DS-CPC7556-R04 www.ixysic.com 1
Bridge Characteristics
Features
• Monolithic Construction
• Surface Mount Package
Applications
• Telecommunications Protection Clamp
• High Voltage Multiplexer/Switch
• High Voltage ESD Clamp
Description
100V Diode Bridge with an integrated Over-Voltage
Protection (OVP) thyristor uses IXYS Integrated
Circuits Division's High Voltage SOI technology.
The CPC7556N integrated diode bridge offers
protection from high voltage transients by means of an
adjustable voltage clamp. The clamp performs two
actions, first to limit the voltage across the diode
bridge rectified outputs to a value determined by
external resistors and the gate voltage and second to
fully discharge the V
+
to V
outputs when the Gate’s
trigger threshold is exceeded during the voltage
limiting function. The rectified outputs are discharged
as a result of the voltage fold-back function of the OVP
device. Voltage fold back of the OVP circuit will
continue until the current through the protector falls
below the hold current threshold.
Terminating the gate to V
will disable the clamp
voltage feature up to the thyristor’s off state voltage.
Ordering Information
CPC7556N Diagram
Parameter Rating Units
Reverse Voltage 100 V
Forward Current 240
mA
rms
Thyristor Current 120 mA
Part Description
CPC7556N 8-Pin SOIC in Tubes (100/Tube)
CPC7556NTR 8-Pin SOIC Tape & Reel (2000/Reel)
+
-
G
A/B
B/A
A
K
CPC7556
Diode Bridge with Integrated
Adjustable OVP Circuit
I
NTEGRATED
C
IRCUITS
D
IVISION
R04 www.ixysic.com 2
CPC7556
1 Specifications
1.1 Package Pinout
1.2 Pin Description
1.3 Absolute Maximum Ratings
Unless Otherwise Specified all electrical ratings are at 25C
1
Derate package for P
DISS
120C/W.
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
G
N/C
~B
N/C
N/C
~A
-
+
8
1
45
Pin# Name Description
1
Negative Bridge Output
2G
Thyristor Gate
3N/C
No Connection
4+
Positive Bridge Output
5~A
Input A
6N/C
No Connection
7N/C
No Connection
8~B
Input B
Parameter Symbol Minimum Maximum Units
Reverse Voltage
V
RRM
- 120 V
Diode Forward Current (Average)
I
F
- 250
mA
rms
Diode Forward Surge Current
I
FSM
-2A
Gate Voltage
V
GK
-4 7 V
Gate Current
I
GK
-20mA
Overvoltage Current
I
AK
- 120 mA
Thyristor Surge Current
I
TSM
-1.2A
Fusing Current
I
2
t
-0.02
A
2
s
ESD, Human Body Model
--3kV
Junction Temperature
1
T
J
-+150C
Storage Temperature
T
STG
-65 +150 C
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NTEGRATED
C
IRCUITS
D
IVISION
3 www.ixysic.com R04
CPC7556
1.4 Recommended Operating Conditions
1.5 General Conditions
Typical values are characteristic of the device at 25C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for T
A
=25C.
1.6 DC Electrical Characteristics
Parameter Symbol Minimum Maximum Units
Diode Forward Current (Average)
I
F
- 240
mA
rms
Reverse Voltage
V
R
- 100 V
Operating Temperature Range
T
A
-40 +125 C
Thermal Impedance
JA
120 - C/W
Parameter Conditions Symbol Minimum Typical Maximum Units
Diode Bridge Characteristics:
Forward Current
-
I
F
- - 240
mA
rms
Diode Forward Voltage Drop
I
F
= 40mA
V
F
0.83 0.91 0.97
V
I
F
= 250mA
1 1.3 1.49
Reverse Voltage Leakage Current
V
R
= 100V I
R
--1A
Thyrister Characteristics:
Gate Trigger Current
V
+/
= V
AK
= 10V,
I
AK
= 110mA
I
GT
0.5 1.2 1.8 mA
Gate Trigger Voltage
V
GK
2.5 2.8 3.2 V
Trigger Current
-
I
AKT
-2540mA
Hold Current
-
I
H
70 100 - mA
Peak Off State Voltage
V
GK
= 0V, I
AK
= 5 uA V
DRM
110 - - V
P1-P3P4-P6

CPC7556NTR

Mfr. #:
Buy CPC7556NTR
Manufacturer:
IXYS Integrated Circuits
Description:
Switch ICs - Various DIODE BRIDGE w/OVP 100V, 240mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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