PS12017-A

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12017-A
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V, VDB = 15V, VDL = 5V unless otherwise noted)
(Note 3) : (a) Allowable minimum input on-pulse width : This item applies to P-side circuit only.
(b) Allowable maximum input on-pulse width : This item applies to both P-side and N-side circuits excluding the brake circuit.
(Note4) : CL output : The "current limit warning (CL) operation circuit outputs warning signal whenever the arm current exceeds this limit. The
circuit is reset automatically by the next input signal and thus, it operates on a pulse-by-pulse scheme.
(Note5) : The short circuit protection works instantaneously when a high short circuit current flows through an internal IGBT rising up momen-
tarily. The protection function is, thus meant primarily to protect the ASIPM against short circuit distraction. Therefore, this function is
not recommended to be used for any system load current regulation or any over load control as this might, cause a failure due to
excessive temperature rise. Instead, the analogue current output feature or the over load warning feature (CL) should be appropri-
ately used for such current regulation or over load control operation. In other words, the PWM signals to the ASIPM should be shut
down, in principle, and not to be restarted before the junction temperature would recover to normal, as soon as a fault is feed back
from its F
O1 pin of the ASIPM indicating a short circuit situation.
SC
OT
OTr
UV
DB
UVDBr
UVDH
UVDHr
OVDH
OVDHr
tdv
IFO(H)
IFO(L)
±IOL
VDL = 5V, VDH = 15V, TC = –20 ~ 100°C
(Note 4)
t
d(read)
ICL(H)
ICL(L)
VDH = 15V
V
DL = 5V
T
C = –20 ~ 100°C (Fig.4)
t
int
VCO
VC+(200%)
VC–(200%)
|VCO|
V
C+
VC–
Ratings
1
Min.
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Filter time
Over tenperature
protection
Signal output cur-
rent of CL operation
Ic = 0A
Ic = I
OP(200%)
Ic = –IOP(200%)
Allowable input signal dead time
for blocking arm shoot-through
TC 100°C, Tj 125°C
V
DH = 15V, VDL = 5V, TC = –20°C ~ +100°C Note 3)
Relates to corresponding inputs (Except brake part)
T
C = –20°C ~ +100°C
Relates to corresponding inputs (Except brake part)
Condition
Symbol Item
Typ. Max.
Unit
Input inter-lock sensing
Offset change area vs temperature
Idle
Active
Supply circuit
under and
over voltage
protection
Idle
Active
Fault output current
kHz
µs
tdead
Analogue signal linearity with
output current
V
DH = 15V, VDL = 5V, TC = –20 ~ 100°C
Analogue signal output voltage limit
Ic > IOP(200%), VDH = 15V,
V
DL = 5V (Fig. 4)
V
C
(200%)
Analogue signal overall linear
variation
Analogue signal data hold
accuracy
|V
CO-VC±(200%)|
r
CH
Correspond to max. 500µs data hold period only,
Ic = I
OP(200%) (Fig. 5)
After input signal trigger point (Fig. 8)
Open collector onput
Tj = 25°C (Fig. 7), (Note 5)
V
DL = 5V, VDH = 15V
T
C = –20°C ~ +100°C
Tj 125°C
Open collector output
4.0
1.87
0.77
2.97
4.0
–5
20.4
33.6
100
10.0
10.5
11.05
11.55
18.00
16.50
65
2.27
1.17
3.37
15
1.1
3
1
25.5
43.0
110
90
11.0
11.5
12.00
12.50
19.20
17.50
10
1
15
500
100
2.57
1.47
3.67
0.7
5
1
30.5
120
12.0
12.5
12.75
13.25
20.15
18.65
1
µs
ns
V
V
V
mV
V
V
V
%
µs
µA
mA
A
A
°C
°C
V
V
V
V
V
V
µs
µA
mA
Analogue signal reading time
CL warning operation level
Short circuit current trip level
f
PWM
txx
PWM input frequency
Allowable input on-pulse width
V5.04.8VDL
VDH, VDB
800
Control supply voltage
Applied between P-N
Applied between V
DH-GND, CBU+-CBU–, CBV+-CBV–,
C
BW+-CBW–
ConditionSymbol
Item
Ratings
VCC Supply voltage
Min.
RECOMMENDED CONDITIONS
Typ. Max.
Unit
Control supply voltage
Applied between V
DL-GND
13.5
600
15.0
16.5
5.2
V
V
V
DH
, V
DB
,
V
DL
VCIN(on)
VCIN(off)
fPWM
tdead
Using application circuit
Using application circuit
–1
4.8
2
4.0
10
+1
0.3
15
V/µs
V
V
kHz
µs
Supply voltage ripple
Input ON voltage
Input OFF voltage
PWM Input frequency
Arm shoot-through blocking time
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12017-A
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
200–200
Analogue output signal
data hold range
1
2
3
4
5
4003001000–100–300–400
0
V
C
+(200%)
V
C0
V
C
(200%)
V
C
(V)
V
C
+
V
C
min
max
Real load current peak value.(%)(I
c
=I
o
2)
V
DH
=15V
V
DL
=5V
T
C
=
20
~
100˚C
Note : Input interlock protection circuit ; It is operated when the input signals for any upper-arm / lower-arm pair of a phase are simulta-
neously in “LOW” level.
By this interlocking, both upper and lower IGBTs of this mal-triggered phase are cut off, and “F
O” signal is outputted. After an “input
interlock” operation the circuit is latched. The “F
O
” is reset by the high-to-low going edge of either an upper-leg, or a lower-leg input,
whichever comes in later.
0V
0V
0V
0V
0V
Input signal V
CIN(p)
of each phase upper arm
Input signal V
CIN(n)
of each phase lower arm
Gate signal V
o(p)
of each phase upper arm
(ASIPM internal)
Gate signal V
o(n)
of each phase upper arm
(ASIPM internal)
Error output F
O1
Note : Short circuit protection operation. The protection operates with “FO” flag and reset on a pulse-by-pulse scheme. The protection by
gate shutdown is given only to the IGBT that senses an overload (excluding the IGBT for the “Brake”).
S
C
delay time
Short circuit sensing signal V
S
Error output F
O1
Gate signal Vo of each phase
upper arm(ASIPM internal)
Input signal V
CIN
of each phase
upper arm
0V
0V
0V
0V
Fig. 4 OUTPUT CURRENT ANALOGUE SIGNALING
LINEARITY
Fig. 5 OUTPUT CURRENT ANALOGUE SIGNALING
“DATA HOLD” DEFINITION
Fig. 7 TIMING CHART AND SHORT CIRCUIT PROTECTION OPERATION
Fig. 6 INPUT INTERLOCK OPERATION TIMING CHART
V
CH
(5
µ
s) V
CH
(505
µ
s)
0V
V
C
500µs
r
CH
=
V
CH
(505
µ
s)-V
CH
(5
µ
s)
V
CH
(5
µ
s)
Note ; Ringing happens around the point where the signal output
voltage changes state from “analogue” to “data hold” due
to test circuit arrangement and instrumentational trouble.
Therefore, the rate of change is measured at a 5 µs delayed point.
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12017-A
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
U
P
,V
P
,W
P
,U
N
,V
N
,W
N
,Br
F
O1
,F
O2
,F
O3
,CL
CU,CV,CW
GND(Logic)
V
DL
(5V)
ASIPM
CPU
10k
5.1k
0.1nF
R
R
0.1nF
on
on
on
on
0
0
0
V
PN
DC-Bus voltage
Control voltage supply
Boot-strap voltage
N-Side input signal
P-Side input signal
Brake input signal
F
O
1 output signal
V
DB
V
CIN(N)
V
CIN(P)
V
CIN(Br)
F
OI
V
DH, DL
b)
a)
PWM starts
N-side IGBT Current N-side FWDi Current
t(hold)
td(read)
Delay time
+I
CL
–I
CL
on
off
on
off
0
0
on
off
0
Ref
V
CIN
V(hold)
I
C
(V
S
)
V
C
V
CL
Fig. 9 START-UP SEQUENCE
Normally at start-up, Fo and CL output signals will be pulled-up
High to V
DL voltage (OFF level); however, FO1 output may fall to
Low (ON) level at the instant of the first ON input pulse to an N-Side
IGBT. This can happen particularly when the boot-strap capacitor is
of large size. F
O1 resetting sequence (together with the boot-strap
charging sequence) is explained in the following graph
Fig. 10 RECOMMENDED I/O INTERFACE CIRCUIT
a) Boot-strap charging scheme :
Apply a train of short ON pulses at all N-IGBT input pins for adequate charging (pulse width = approx. 20µs number of pulses =10 ~ 500 de-
pending on the boot-strap capacitor size)
b) F
O1 resetting sequence:
Apply ON signals to the following input pins : Br Un/Vn/Wn Up/Vp/Wp in that order.
Fig. 8 INVERTER OUTPUT ANALOGUE CURRENT SENSING AND SIGNALING TIMING CHART.

PS12017-A

Mfr. #:
Manufacturer:
Description:
MOD IPM 3PHASE IGBT 1200V 25A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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