CUS15S40
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
I
O
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
40
1.5
5
125
-55 to 125
Unit
V
A
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
2
)
Note 2: Measured with a 10 ms pulse.
5.
5.
5.
5. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
V
F
(1)
V
F
(2)
I
R
C
t
Test Condition
I
F
= 1 A (Pulse test)
I
F
= 1.5 A (Pulse test)
V
R
= 40 V (Pulse test)
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.40
0.47
170
Max
0.45
0.55
200
Unit
V
V
µA
pF
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
Marking Code
7D
Part Number
CUS15S40
7.
7.
7.
7. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2014-04-07
Rev.3.0
