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MT8JSF25664HZ-1G1D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB (x64, SR) 204-Pin Halogen-Free DDR3 SDRAM SO-
DIMM
DRAM Operating Conditions
PDF: 09005aef83364a85
jsf8c128_256x64hz.pdf - Rev. E 04/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 1GB
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
960 880 800 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1120 1040 960 mA
Precharge power-down current: Slow exit I
DD2P
96 96 96 mA
Precharge power-down current: Fast exit I
DD2P
360 320 280 mA
Precharge quiet standby current I
DD2Q
536 480 424 mA
Precharge standby current I
DD2N
560 520 440 mA
Precharge standby ODT current I
DD2NT
760 680 600 mA
Active power-down current I
DD3P
360 320 280 mA
Active standby current I
DD3N
536 496 456 mA
Burst read operating current I
DD4R
2000 1600 1280 mA
Burst write operating current I
DD4W
2000 1760 1520 mA
Refresh current I
DD5
2080 1920 1760 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
48 48 48 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
72 72 72 mA
All banks interleaved read current I
DD7
4800 3920 3120 mA
Reset current I
DD8
112 112 112 mA
1GB, 2GB (x64, SR) 204-Pin Halogen-Free DDR3 SDRAM SO-
DIMM
I
DD
Specifications
PDF: 09005aef83364a85
jsf8c128_256x64hz.pdf - Rev. E 04/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
760 680 600 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
840 800 760 mA
Precharge power-down current: Slow exit I
DD2P
96 96 96 mA
Precharge power-down current: Fast exit I
DD2P
280 240 200 mA
Precharge quiet standby current I
DD2Q
320 280 240 mA
Precharge standby current I
DD2N
336 296 256 mA
Precharge standby ODT current I
DD2NT
400 360 320 mA
Active power-down current I
DD3P
320 280 240 mA
Active standby current I
DD3N
360 320 280 mA
Burst read operating current I
DD4R
1440 1280 1120 mA
Burst write operating current I
DD4W
1480 1320 1160 mA
Refresh current I
DD5
1720 1600 1520 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
120 120 120 mA
All banks interleaved read current I
DD7
3480 3080 2680 mA
Reset current I
DD8
112 112 112 mA
1GB, 2GB (x64, SR) 204-Pin Halogen-Free DDR3 SDRAM SO-
DIMM
I
DD
Specifications
PDF: 09005aef83364a85
jsf8c128_256x64hz.pdf - Rev. E 04/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MT8JSF25664HZ-1G1D1

Mfr. #:
Buy MT8JSF25664HZ-1G1D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 2GB 204SODIMM
Lifecycle:
New from this manufacturer.
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