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PS2561AL-1-V-A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Reverse Voltage VR 6 V
Forward Current (DC) IF 30 mA
Power Dissipation Derating
Δ
PD/°C 1.5 mW/°C
Power Dissipation PD 150 mW
Peak Forward Current
*1
IFP 0.5 A
Transistor Collector to Emitter Voltage VCEO 70 V
Emitter to Collector Voltage VECO 5 V
Collector Current IC 30 mA
Power Dissipation Delay
Δ
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage
*2
BV 5 000 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
*1 PW = 100
μ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10222EJ08V0DS
5
PS2561A-1,PS2561AL-1,PS2561AL1-1,PS2561AL2-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 10 pF
Transistor Collector to Emitter Dark
Current
ICEO VCE = 70 V, IF = 0 mA 100 nA
Coupled Current Transfer Ratio
(I
C/IF)
*1
CTR I
F = 5 mA, VCE = 5 V 50 400 %
Collector Saturation
Voltage
VCE (sat) IF = 10 mA, IC = 2 mA 0.13 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF
Rise Time
*2
tr VCC = 10 V, IC = 2 mA, RL = 100 Ω 3
μ
s
Fall Time
*2
tf 5
*1 CTR rank
N : 50 to 400 (%)
H : 80 to 160 (%)
Q : 100 to 200 (%)
W : 130 to 260 (%)
L : 200 to 400 (%)
*2 Test circuit for switching time
V
CC
V
OUT
I
F
R
L
= 100 Ω
50 Ω
Input
Output
In monitor
PW = 100 s
Duty cycle = 1/10
μ
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
Data Sheet PN10222EJ08V0DS
6
PS2561A-1,PS2561AL-1,PS2561AL1-1,PS2561AL2-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
200
150
100
50
0
25 50 75 100 125
1.5 mW/°C
Diode Power Dissipation P
D
(mW)
Ambient Temperature T
A
(°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
150
100
50
0
25 50 75 100 125
1.5 mW/°C
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(°C)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0°C
–25°C
–55°C
+60°C
+25°C
T
A
= +100°C
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
0.05
Collector to Emitter Dark Current I
CEO
(nA)
Ambient Temperature T
A
(°C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
1
10
100
1 000
10 000
0 25 50 75 100
V
CE
= 70 V
V
CE
= 24 V
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
10
20
02
46
8
15
5
10
I
F
= 1 mA
I
F
= 2 mA
I
F
= 5 mA
I
F
= 10 mA
Collector Saturation Voltage V
CE (sat)
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0
I
F
= 1 mA
I
F
= 2 mA
I
F
= 5 mA
I
F
= 10 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PN10222EJ08V0DS
7
PS2561A-1,PS2561AL-1,PS2561AL1-1,PS2561AL2-1
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PS2561AL-1-V-A

Mfr. #:
Buy PS2561AL-1-V-A
Manufacturer:
CEL
Description:
Transistor Output Optocouplers 4pinDIP sglTr DC BSI Cuplr LeadBend VDE
Lifecycle:
New from this manufacturer.
Delivery:
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