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NCV8403ADTRKG

P1-P3P4-P6P7-P9P10-P12
NCV8403, NCV8403A
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
L (mH) L (mH)
10010
1
10
10010
100
1000
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms) TIME IN CLAMP (ms)
101
1
10
100
101
100
1000
ILmax (A)
Emax (mJ)
ILmax (A)
Emax (mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
150°C
V
DS
(V) V
GS
(V)
543210
0
5
10
20
25
4.03.53.02.52.01.51.0
0
5
10
15
20
I
D
(A)
I
D
(A)
15
V
GS
= 2.5 V
3 V
4 V
5 V
6 V 7 V 8 V 9 V
10 V
−40°C
25°C
100°C
Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics
T
a
= 25°C
V
DS
= 10 V
NCV8403, NCV8403A
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
Figure 8. R
DS(on)
vs. Gate−Source Voltage Figure 9. R
DS(on)
vs. Drain Current
V
GS
(V) I
D
(A)
R
DS(on)
(m
W
)
R
DS(on)
(mW)
−40°C
25°C
100°C
150°C
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
150°C, V
GS
= 5 V
Figure 10. Normalized R
DS(on)
vs. Temperature Figure 11. Current Limit vs. Gate−Source
Voltage
T (°C) V
GS
(V)
1201008040200−20−40
0.50
0.75
1.00
1.25
1.50
1.75
2.00
NORMALIZED R
DS(on)
I
LIM
(A)
60
−40°C
25°C
100°C
140
V
GS
= 5 V
V
GS
= 10 V
25
50
75
100
125
150
345678910
20
30
50
60
70
80
90
100
13 5 7 9
150°C, V
GS
= 10 V
5
10
15
20
25
567891
0
150°C
I
D
= 3 A
24681
0
40
I
D
= 5 A
V
DS
= 10 V
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
T
J
(°C) V
DS
(V)
40353025201510
0.00001
0.001
0.01
0.1
1
10
100
I
LIM
(A)
I
DSS
(mA)
−40°C
25°C
100°C
150°C
5
10
15
20
25
−40 −20 0 20 40 60 80 100 120 140
V
GS
= 5 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
0.0001
NCV8403, NCV8403A
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source−Drain Diode Forward
Characteristics
T (°C) I
S
(A)
1401006040200−20−40
0.6
0.7
0.8
0.9
1.0
1.1
1.2
87654321
0.5
0.6
0.7
0.8
0.9
1.0
NORMALIZED V
GS(th)
(V)
V
SD
(V)
80 120 910
−40°C
25°C
100°C
150°C
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
V
GS
(V) V
GS
(V)
109876543
0
50
100
150
250
109876543
0
0.5
1.0
1.5
3.0
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
t
d(off)
t
d(on)
t
f
t
r
−dV
DS
/d
t(on)
dV
DS
/d
t(off)
I
D
= 1.2 mA
V
DS
= V
GS
200
V
GS
= 0 V
V
DD
= 25 V
I
D
= 5 A
R
G
= 0 W
2.0
2.5
V
DD
= 25 V
I
D
= 5 A
R
G
= 0 W
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
R
G
(W)R
G
(W)
2000150010005000
0
25
50
75
100
2000150010005000
0.50
0.75
1.00
1.25
2.00
2.50
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
t
d(on)
, V
GS
= 5 V
t
d(off)
, V
GS
= 5 V
t
r
, V
GS
= 5 V
t
f
, V
GS
= 5 V
t
d(on)
, V
GS
= 10 V
t
d(off)
, V
GS
= 10 V
t
r
, V
GS
= 10 V
t
f
, V
GS
= 10 V
1.50
1.75
2.25
−dV
DS
/d
t(on)
, V
GS
= 5 V
dV
DS
/d
t(off)
, V
GS
= 5 V
−dV
DS
/d
t(on)
, V
GS
= 10 V
dV
DS
/d
t(off)
, V
GS
= 10 V
V
DD
= 25 V
I
D
= 5 A
V
DD
= 25 V
I
D
= 5 A
P1-P3P4-P6P7-P9P10-P12

NCV8403ADTRKG

Mfr. #:
Buy NCV8403ADTRKG
Manufacturer:
ON Semiconductor
Description:
MOSFET SELF PROTECTED FET
Lifecycle:
New from this manufacturer.
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