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NCV8403STT1G

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 6
1 Publication Order Number:
NCV8403/D
NCV8403, NCV8403A
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
NCV8403/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
www.onsemi.com
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
MAX
(Limited)
42 V
53 mW @ 10 V
15 A
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8403 or 8403A
G or G = Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxxG
G
23
4
GATE
DRAIN
SOURCE
DRAIN
2
3
4
1
2
3
4
DPAK
CASE 369C
YWW
xxxxxG
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
NCV8403, NCV8403A
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 Vdc
Gate−to−Source Voltage V
GS
"14 Vdc
Drain Current Continuous I
D
Internally Limited
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
P
D
1.13
1.56
W
Thermal Resistance − SOT−223 Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance − DPAK Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
R
q
JC
R
q
JA
R
q
JA
12
110
80
2.5
95
50
°C/W
Single Pulse Inductive Load Switching Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 V, I
L
= 2.8 A, L = 120 mH, R
G
= 25 W)
E
AS
470 mJ
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0 W, R
L
= 4.5 W, t
d
= 400 ms)
V
LD
55 V
Operating Junction Temperature T
J
−40 to 150 °C
Storage Temperature T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8403, NCV8403A
www.onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
(V
GS
= 0 Vdc, I
D
= 250 mAdc, T
J
= −40°C to 150°C) (Note 3)
V
(BR)DSS
42
40
46
45
51
51
Vdc
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C) (Note 3)
I
DSS
−
−
0.6
2.5
5.0
−
mAdc
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− 50 125
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.7
5.0
2.2
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C) (Note 3)
R
DS(on)
−
−
53
95
68
123
mW
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C) (Note 3)
R
DS(on)
−
−
63
105
76
135
mW
Source−Drain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
V
SD
− 0.95 1.1 V
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% V
IN
to 90% I
D
)
V
IN
= 0 V to 5 V, V
DD
= 25 V
I
D
= 1.0 A, Ext R
G
= 2.5 W
t
ON
44
msms
Turn−OFF Time (90% V
IN
to 10% I
D
) t
OFF
84
Turn−ON Time (10% V
IN
to 90% I
D
)
V
IN
= 0 V to 10 V, V
DD
= 25 V
,
I
D
= 1.0 A, Ext R
G
= 2.5 W
t
ON
15
Turn−OFF Time (90% V
IN
to 10% I
D
) t
OFF
116
Slew−Rate ON (20% V
DS
to 50% V
DS
)
V
in
= 0 to 10 V, V
DD
= 12 V,
R
L
= 4.7 W
−dV
DS
/dt
ON
2.43
V/ms
Slew−Rate OFF (80% V
DS
to 50% V
DS
) dV
DS
/dt
OFF
0.83
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Current Limit
V
GS
= 5.0 V, V
DS
= 10 V
V
GS
= 5.0 V, T
J
= 150°C (Note 3)
I
LIM
10
5.0
15
10
20
15
Adc
Current Limit V
GS
= 10 V, V
DS
= 10 V
V
GS
= 10 V, T
J
= 150°C (Note 3)
I
LIM
12
8.0
17
13
22
18
Adc
Temperature Limit (Turn−off) V
GS
= 5.0 Vdc (Note 3) T
LIM(off)
150 175 200 °C
Thermal Hysteresis V
GS
= 5.0 Vdc
DT
LIM(on)
− 15 − °C
Temperature Limit (Turn−off) V
GS
= 10 Vdc (Note 3) T
LIM(off)
150 165 185 °C
Thermal Hysteresis V
GS
= 10 Vdc
DT
LIM(on)
− 15 − °C
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
I
GON
50
mA
V
GS
= 10 V I
D
= 1.0 A
400
Current Limit Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GCL
0.1
mA
V
GS
= 10 V, V
DS
= 10 V
0.6
Thermal Limit Fault Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GTL
0.45
mA
V
GS
= 10 V, V
DS
= 10 V
1.5
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 3)
Electro−Static Discharge Capability
Human Body Model (HBM) ESD 4000 − − V
Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
P1-P3P4-P6P7-P9P10-P12

NCV8403STT1G

Mfr. #:
Buy NCV8403STT1G
Manufacturer:
ON Semiconductor
Description:
IC DRIVER LOW SIDE SOT-223-4
Lifecycle:
New from this manufacturer.
Delivery:
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