FDS5692Z Datasheet FDS5692Z | P1-P3

February 2006

FDS5692Z Rev C(W)

www.fairchildsemi.com

FDS5692Z

N-Channel UltraFET Trench

®

MOSFET

50V, 5.8A, 24mΩ

General Description

This N-Channel UltraFET device has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low r

DS(on)

and fast switching speed.

Applications

 DC/DC converter

Features

 Max r

DS(on)

= 24mΩ at V

GS

= 10V, I

D

= 5.8A

 Max r

DS(on)

= 33mΩ at V

GS

= 4.5V, I

D

= 5.6A

 ESD protection diode (note 3)

 Low Qgd

 Fast switching speed

S

D

S

SO-8

D

G

MOSFET Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DS

Drain-Source Voltage 50 V

V

GS

Gate-Source Voltage

± 20

V

Drain Current – Continuous (Note 1a) 5.8

I

D

– Pulsed 40

A

E

AS

Single Pulse Avalanche Energy 72 mJ

UltraFET Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

P

D

(Note 1c)

1.1

W

T

J

, T

STG

Operating and Storage Junction Temperature Range –55 to 150

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 50

°C/W

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1c) 125

R

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 25

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

FDS5692Z FDS5692Z SO-8 13” 12mm 2500units

4

3

2

1

5

6

7

8

FD

S569

2Z N-

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OS

FET

FDS5692Z Rev C(W) www.fairchildsemi.com

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings

E

AS

Drain-Source Avalanche Energy

(Single Pulse)

V

DD

= 50 V, I

D

= 12 A, L=1mH 72 mJ

I

AS

Drain-Source Avalanche Current 12 A

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 μA

50 V

ΔBVDSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 μA, Referenced to 25°C

48

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 40 V V

GS

= 0 V 1

μA

I

GSS

Gate–Body Leakage

V

GS

= ± 20V, V

DS

= 0 V

± 10 μA

On Characteristics (Note 4)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 μA

1 1.6 3 V

ΔVGS(th)

ΔT

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= 250 μA, Referenced to 25°C

–6

mV/°C

r

DS(on)

Static Drain–Source

On–Resistance

V

GS

= 10 V, I

D

= 5.8 A

V

GS

= 4.5 V, I

D

= 5.6 A

V

GS

= 10 V, I

D

= 5.8A, T

J

= 125°C

20

26

32

24

33

41

mΩ

Dynamic Characteristics

C

iss

Input Capacitance 1025 pF

C

oss

Output Capacitance 150 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 25 V, V

GS

= 0 V,

f = 1.0 MHz

50 pF

R

G

Gate Resistance f = 1.0 MHz 0.79

Ω

Q

g(TOT)

Total Gate Charge, V

GS

= 10V 18 25 nC

Q

g(TOT)

Total Gate Charge, V

GS

= 5V 10 14 nC

Q

gs

Gate–Source Gate Charge

2.8 nC

Q

gd

Gate–Drain Gate Charge

V

DS

= 25V, I

D

= 5.8A

3.0 nC

Switching Characteristics (Note 4)

t

d(on)

Turn–On Delay Time 9 18 ns

t

r

Rise Time 5 10 ns

t

d(off)

Turn–Off Delay Time 27 43 ns

t

f

Fall Time

V

DD

= 25 V, I

D

= 5.8A,

V

GS

= 10 V, R

GEN

= 6 Ω

6 12 ns

FD

S569

2Z N-

C

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FET Tr

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®

M

OS

FET

FDS5692Z Rev C(W) www.fairchildsemi.com

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 50°C/W when

mounted on a 1in

2

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in

2

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics

I

S

= 5.8 A 0.79 1.25 V

V

SD

Drain–Source Diode Forward

Voltage

V

GS

= 0 V,

I

S

= 2.9 A 0.75 1.0 V

t

rr

Reverse Recovery Time 24 ns

Q

rr

Reverse Recovery Charge

I

F

= 6A, dI

F

/dt = 100A/μs

16 nC

FD

S569

2Z N-

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FET

FDS5692Z

FDS5692Z

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