FDS9412

April 2000
2000 Fairchild Semiconductor Corporation
FDS9412 Rev D(W)
FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer DC-DC
converter where fast switching, low conduction loss and
high efficiency are needed.
Features
7.9 A, 30 V. R
DS(ON)
= 22 m
@ V
GS
= 10 V
R
DS(ON)
= 36 m
@ V
GS
= 4.5 V
Very low gate charge.
High switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current – Continuous
(Note 1a)
7.9 A
– Pulsed 24
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9412 FDS9412 13’’ 12mm 2500 units
FDS9412
FDS9412 Rev D(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
µ
A
30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
28
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1
µ
A
I
GSSF
Gate–Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V V
DS
= 0 V –100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
11.62.0 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
-4.3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 7.9 A
V
GS
= 10 V, I
D
= 7.9 A, T
J
=125
°
C
V
GS
= 4.5 V, I
D
= 6.2 A
19
30
25
22
35
36
m
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 16 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 7.9 A 22 S
Dynamic Characteristics
C
iss
Input Capacitance 830 pF
C
oss
Output Capacitance 185 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
80 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 6 12 ns
t
r
Turn–On Rise Time 10 20 ns
t
d(off)
Turn–Off Delay Time 18 32 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
510ns
Q
g
Total Gate Charge 14 22 nC
Q
gs
Gate–Source Charge 2.7 nC
Q
gd
Gate–Drain Charge
V
DS
= 12 V, I
D
= 7.9 A,
V
GS
= 10 V
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2 A
(Note 2)
0.7 1.2 V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
FDS9412
FDS9412 Rev D(W)
Typical Characteristics
0
5
10
15
20
25
30
00.511.522.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5.0V
4.5V
2.5V
V
GS
= 10V
6.0V
3.0V
3.5V
4.0V
0.5
1
1.5
2
2.5
0 5 10 15 20 25 30
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
5.0V
4.5V
4.0V
6.0V
10V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 7.9A
V
GS
= 10V
0
0.02
0.04
0.06
0.08
0.1
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 7.9 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9412

FDS9412

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SO-8 SGL N-CH 30V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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