OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRF7326D2TR

P1-P3P4-P6P7-P8
IRF7326D2
4 www.irf.com
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
-V , Drain-to-Source Volta
g
e
(
V
)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , Total Gate Char
g
e
(
nC
)
G
A
-V , Gate-to-Source Voltage (V)
GS
I = -3.0A
V = -24V
DS
D
FOR TEST CIRCUIT
SEE FIGURE 12
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2 1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Volta
g
e
(
V
)
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Sin
g
le Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7326D2
www.irf.com 5
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Power Mosfet Characteristics
0 2 4 6 8 10 12 14
0.00
0.10
0.20
0.30
0.40
0.50
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -4.5V
VGS = -10V
4 6 8 10 12 14 16
0.06
0.08
0.10
0.12
0.14
R , Drain-to-Source On Resistance
-V , Gate-to-Source Volta
g
e (V)
GS
DS (on)
ID = -3.6A
( Ω )
( Ω )
IRF7326D2
6 www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
Reverse Current - I
R
(mA)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30
R
100°C
75°C
50°C
25°C
125°C
A
T = 150°C
J
Reverse Volta
g
e - V (V)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
F(AV)
A
Avera
g
e Forward Current - I
(
A
)
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
V = 80% Rated
R = 62.5°C/W
Square wave
thJA
r
DC
Allowable Ambient Temperature - (°C
)
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
F
Instantaneous Forward Current - I (A)
(
)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Forward Voltage Drop - V
F
(V)
P1-P3P4-P6P7-P8

IRF7326D2TR

Mfr. #:
Buy IRF7326D2TR
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 3.6A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet