BYV29FX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 16 April 2012 2 of 11
NXP Semiconductors
BYV29FX-600
Enhanced ultrafast power diode
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOD113 (TO-220F)
2 A anode
mb n.c. mounting base; isolated
Table 3. Ordering information
Type number Package
Name Description Version
BYV29FX-600 TO-220F plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 "full pack"
SOD113
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage DC - 600 V
I
F(AV)
average forward current square-wave pulse; δ =0.5; T
h
≤ 72 °C;
see Figure 1
; see Figure 2
-9A
I
FRM
repetitive peak forward current square-wave pulse; δ =0.5; t
p
= 25 µs;
T
h
≤ 72 °C
-18A
I
FSM
non-repetitive peak forward current sine-wave pulse; t
p
= 10 ms;
T
j(init)
=25°C; see Figure 3
-91A
sine-wave pulse; t
p
= 8.3 ms;
T
j(init)
=25°C; see Figure 3
- 100 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
