IXTH260N055T2 Datasheet IXTH260N055T2 | P1-P3

DS100078(11/08)

IXTH260N055T2

TrenchT2

TM

Power

MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C55 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 55 V

V

GSM

Transient ± 20 V

I

D25

T

C

= 25°C 260 A

I

LRMS

Lead Current Limit, RMS 160 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

780 A

I

A

T

C

= 25°C 100 A

E

AS

T

C

= 25°C 600 mJ

P

D

T

C

= 25°C 480 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062in.) from case for 10s 300 °C

T

sold

Plastic body for 10 seconds 260 °C

M

d

Mounting torque 1.13 / 10 Nm/lb.in.

Weight 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 55 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.0 4.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

5 μA

V

GS

= 0V T

J

= 150°C 150 μA

R

DS(on)

V

GS

= 10V, I

D

= 50A, Notes 1, 2 3.3 mΩ

V

DSS

= 55V

I

D25

= 260A

R

DS(on)

≤≤

≤

3.3m

ΩΩ

Ω

G = Gate D = Drain

S = Source TAB = Drain

TO-247

G

D

S

(TAB)

Features

z

International standard package

z

175°C Operating Temperature

z

High current handling capability

z

Avalanche rated

z

Low R

DS(on)

Advantages

z

Easy to mount

z

Space savings

z

High power density

Applications

z

Automotive

- Motor Drives

- 12V Battery

- ABS Systems

z

DC/DC Converters and Off-line UPS

z

Primary- Side Switch

z

High Current Switching Applications

Preliminary Technical Information

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH260N055T2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

e

∅ P

TO-247 (IXTH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 55 94 S

C

iss

10.8 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1460 pF

C

rss

215 pF

t

d(on)

20 ns

t

r

27 ns

t

d(off)

36 ns

t

f

24 ns

Q

g(on)

140 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

52 nC

Q

gd

32 nC

R

thJC

0.31 °C/W

R

thCH

0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

I

S

V

GS

= 0V 260 A

I

SM

Repetitive, Pulse width limited by T

JM

1000 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.3 V

t

rr

60 ns

I

RM

3.4

A

Q

RM

102 nC

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 100A

R

G

= 2Ω (External)

I

F

= 130A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 27V

IXTH260N055T2

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

5V

6V

7V

Fig. 3. Output Characteristics

@ 150ºC

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 130A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 260A

I

D

= 130A

Fig. 5. R

DS(on)

Normalized to I

D

= 130A Value

vs. Drain Current

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

2.1

2.2

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175 200

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXTH260N055T2

IXTH260N055T2

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